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HS2JAR3G

Description
Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size368KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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HS2JAR3G Overview

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

HS2JAR3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionSMA, 2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.7 V
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current50 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage600 V
Maximum reverse current5 µA
Maximum reverse recovery time0.075 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL

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