HY27US08121B-FPCB datasheet, PDF

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HY27US08121B-FPCB: DescriptionFlash, 64MX8, 18ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63; Categorystorage storage; File Size360KB，40 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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HY27US08121B-FPCB Overview

Flash, 64MX8, 18ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63

HY27US08121B-FPCB Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SK Hynix
Parts packaging code	BGA
package instruction	VFBGA, BGA63,10X12,32
Contacts	63
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Maximum access time	18 ns
command user interface	YES
Data polling	NO
JESD-30 code	R-PBGA-B63
JESD-609 code	e1
length	11 mm
memory density	536870912 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	4K
Number of terminals	63
word count	67108864 words
character code	64000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX8
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA63,10X12,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
page size	512 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3/3.3 V
Programming voltage	3.3 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1 mm
Department size	16K
Maximum standby current	0.00005 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	20
switch bit	NO
type	SLC NAND TYPE
width	9 mm

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HY27US(08/16)12(1/2)B Series

512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

512Mb NAND FLASH

HY27US(08/16)12(1/2)B

HY27US0812(1/2)B

HY27US1612(1/2)B

This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev 0.5 / Jul. 2007

HY27US(08/16)12(1/2)B Series

512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

1. SUMMARY DESCRIPTION

The Hynix HY27US(08/16)12(1/2)B series is a 64Mx8bit with spare 2Mx8 bit capacity. The device is offered in 3.3V Vcc

Power Supply.

Their NAND cell provides the most cost-effective solution for the solid state mass storage market.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is

erased.

The memory contains 4096 blocks, composed by 32 pages consisting in two NAND structures of 16 series connected Flash

cells.

A program operation allows to write the 512-byte (x8 device) or 256-word (x16 device) page in typical 200us and an erase

operation can be performed in typical 2ms on a 16K-byte (X8 device) block.

Data in the page can be read out at 30ns cycle time (3.3V device) per byte. The I/O pins serve as the ports for address and

data input/output as well as command input. This interface allows a reduced pin count and easy migration towards differ-

ent densities, without any rearrangement of footprint.

Commands, Data and Addresses are synchronously introduced using CE, WE, ALE and CLE input pin.

The on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where

required, and internal verification and margining of data.

The modify operations can be locked using the WP input pin .

The output pin R/B (open drain buffer) signals the status of the device during each operation. In a system with multiple

memories the R/B pins can be connected all together to provide a global status signal.

Even the write-intensive systems can take advantage of the HY27US(08/16)12(1/2)B extended reliability of 100K pro-

gram/erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.

The chip is offered with the CE don’t care function. This option allows the direct download of the code from the NAND Flash

memory device by a microcontroller, since the CE transitions do not stop the read operation.

The copy back function allows the optimization of defective blocks management: when a page program operation fails the

data can be directly programmed in another page inside the same array section without the time consuming serial data

insertion phase.

This device includes also extra features like OTP/Unique ID area, Read ID2 extension.

The HY27US(08/16)12(1/2)B is available in 48 - TSOP1 12 x 20 mm package, 48 - USOP1 12 x 17 mm, FBGA 9 x 11 mm.

1.1 Product List

PART NUMBER

HY27US0812(1/2)B

HY27US1612(1/2)B

ORIZATION

x16

VCC RANGE

2.7V - 3.6 Volt

PACKAGE

48TSOP1/ 48USOP1/ 63FBGA

48TSOP1

Rev 0.5 / Jul. 2007

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