"Spansion, Inc." and "Cypress Semiconductor Corp." have merged together to deliver high-performance, high-quality solutions
at the heart of today's most advanced embedded systems, from automotive, industrial and networking platforms to highly
interactive consumer and mobile devices. The new company "Cypress Semiconductor Corp." will continue to offer "Spansion,
Inc." products to new and existing customers.
Continuity of Specifications
For More Information
N
ot
R
ec
om
m
en
de
d
fo
rN
Please contact your local sales office for additional information about Cypress products and solutions.
ew
D
Cypress continues to support existing part numbers. To order these products, please use only the Ordering Part Numbers listed
in this document.
es
Continuity of Ordering Part Numbers
ig
n
There is no change to this document as a result of offering the device as a Cypress product. Any changes that have been made
are the result of normal document improvements and are noted in the document history page, where supported. Future
revisions will occur when appropriate, and changes will be noted in a document history page.
S29WS512R, S29WS256R, S29WS128R
512/256/128 Mb (32/16/8M x 16 bit)
1.8 V S29WS-R MirrorBit® Flash
This product family has been retired and is not recommended for designs. For new and current designs, S29WS512P,
S29WS256P, and S29WS128P supersedes S29WS512R, S29WS256R, and S29WS128R respectively. This is the factory-
recommended migration path. Please refer to the S29WS-P data sheet for specifications and ordering information.
Availability of this document is retained for reference and historical purposes only.
Features
65 nm MirrorBit Technology
Single supply 1.8 V read/program/erase (1.70 V – 1.95 V)
Wireless Temperature range (-25°C to +85°C)
16-bit (Word) data bus width
Simultaneous Read/Write (SRW) operation
– Read from one bank while programming or erasing in another
bank
– Memory array is divided into 16 equal size banks
Programmable linear (8/16) with wrap around and continuos burst
read modes
RDY output for data transfer flow control
Sector Erase
– Four 32 Kbyte sectors at top or bottom of memory array
– All other sectors are 128 Kbytes
Write Buffer Programming up to 64 -byte groups
Optional acceleration voltage supply (ACC) to reduce factory
programming time
Suspend and Resume commands for Program and Erase
operations
– 100,000 cycles per sector (typical)
– 10-year data retention (typical)
Data Protection
– Low V
CC
write inhibit
Secured Silicon Sector
– 512 Bytes of Secured Silicon Sector region consisting of One Time
Program (OTP) area of 256 bytes each for factory and customer
– Hardware Sector Protection (via ACC pin)
– Boot code controlled sector protection
– A range of sectors may be protected to prevent program and erase
until the next hardware reset or power is removed from the device
de
m
en
Write operation status register bits indicate program and erase
operation completion
N
ot
R
ec
om
Program-Erase Endurance
d
fo
•
Common Flash Interface (CFI) data structure
Offered Packages
– 512/256/128R: 84-ball FBGA (11.6mm x 8mm) VBH084
Cypress Semiconductor Corporation
Document Number: 002-01101 Rev. *I
•
198 Champion Court
rN
– Dynamic sector protection
– All sectors are unprotected at power on for simplified system
production test & programming
– A single command is used to protect all sectors from program or
erase
– A single sector at a time may be unprotected by a command to
enable programming or erase.
ew
San Jose
,
CA 95134-1709
•
408-943-2600
Revised October 09, 2015
D
– All sectors protected when ACC input is at V
IL
es
ig
n
S29WS512R, S29WS256R,
S29WS128R
Performance Characteristics
Read Access Times (maximum values)
Speed Option (MHz)
Synch. Internal Access, ns (t
IA
)
Synch. Burst Access, ns (t
BACC
)
Asynch. Access Time, ns (t
ACC
)
104
75
7.6
80
Current Consumption (typical values)
Burst Read @ 104 MHz (I
CCB
)
Simultaneous Operation @ 104 MHz (I
CC5
)
Program (I
CC2
)
Erase (I
CC2
)
Standby Mode (I
CC3
)
32 mA
52 mA
20 mA
20 mA
20 µA
Effective Write Buffer Programming (V
CC
) Per Word
Effective Write Buffer Programming (V
ACC
) Per Word
Sector Erase (32 KByte Sector) (V
CC
)
Sector Erase (128 KByte Sector) (V
CC
)
12.5 µs
8 µs
0.35 s
0.8 s
Document Number: 002-01101 Rev. *I
N
ot
R
ec
om
m
en
de
d
fo
rN
ew
D
es
Typical Program & Erase Times (typical values)
ig
n
Page 3 of 77
S29WS512R
S29WS256R, S29WS128R
Contents
Features.................................................................................
2
Performance Characteristics...............................................
3
1.
2.
2.1
3.
4.
5.
5.1
5.2
5.3
6.
7.
7.1
7.2
7.3
8.
8.1
8.2
8.3
8.4
General Description.....................................................
5
Ordering Information
................................................... 5
Valid Combinations ........................................................ 5
Input/Output Descriptions & Logic Symbol
.............. 6
Block Diagrams............................................................
7
Physical Dimensions/Connection Diagrams.............
Related Documents .......................................................
Special Handling Instructions for FBGA Package..........
Connection Diagrams and Physical Dimensions ...........
Address Space Maps
.................................................
Data Address & Quantity Nomenclature ......................
Flash Memory Array.....................................................
Device ID and CFI (ID-CFI)..........................................
7
7
7
8
9.
9.1
9.2
9.3
9.4
9.5
10.
10.1
10.2
10.3
11.
11.1
11.2
11.3
11.4
11.5
11.6
11.7
11.8
11.9
Sector Protection/Unprotection.................................
42
Sector Lock/Unlock Command ..................................... 43
Sector Lock Range Command...................................... 43
Hardware Data Protection Methods.............................. 44
SSR Lock...................................................................... 44
Secure Silicon Region................................................... 44
Power Conservation Modes.......................................
46
Standby Mode............................................................... 46
Automatic Sleep Mode.................................................. 46
Output Disable (OE#).................................................... 46
Electrical Specifications.............................................
47
Absolute Maximum Ratings .......................................... 47
Operating Ranges......................................................... 47
DC Characteristics ........................................................ 48
Capacitance .................................................................. 49
AC Test Conditions ....................................................... 49
Key to Switching Waveforms ........................................ 50
V
CC
Power Up............................................................... 50
CLK Characterization.................................................... 51
AC Characteristics ........................................................ 52
Document Number: 002-01101 Rev. *I
N
ot
R
ec
Device Operations
.....................................................
Device Bus Operations ................................................
Asynchronous Read.....................................................
Page Mode Read .........................................................
Synchronous (Burst) Read Mode and Configuration
Register........................................................................
8.5 Status Register ............................................................
8.6 Blank Check.................................................................
8.7 Simultaneous Read/Write ............................................
8.8 Writing Commands/Command Sequences..................
8.9 Program/Erase Operations ..........................................
8.10 Handshaking ................................................................
8.11 Hardware Reset ...........................................................
8.12 Software Reset ............................................................
23
24
24
25
25
31
34
35
35
35
41
42
42
de
12. Appendix
..................................................................... 63
12.1 Command Definitions.................................................... 63
12.2 Device ID and Common Flash Memory Interface
Address Map................................................................. 65
13.
Revision History..........................................................
71
om
m
en
d
fo
rN
ew
10
11
12
21
D
es
Product Overview
...................................................... 10
ig
n
Page 4 of 77
S29WS512R
S29WS256R, S29WS128R
1.
General Description
The Spansion S29WS512/256/128R are Mirrorbit flash products fabricated on 65 nm process technology. These burst mode flash
devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate
data and address pins. These products can operate up to 104 MHz and use a single V
CC
of 1.7 V to 1.95 V that makes them ideal
for today’s demanding wireless applications requiring higher density, better performance and lowered power consumption.
2.
Ordering Information
This product family has been retired and is not recommended for designs. For new and current designs, S29WS512P, S29WS256P,
and S29WS128P supersedes S29WS512R, S29WS256R, and S29WS128R respectively. This is the factory-recommended
migration path. Please refer to the S29WS-P data sheet for specifications and ordering information.
Availability of this document is retained for reference and historical purposes only.
The order number is formed by a valid combinations of the following:
S29WS
512
R
0P
BH
W
00
0
Packing Type
0 = Tray (standard; see note
1)
2 = 7-inch Tape and Reel
3 = 13-inch Tape and Reel
Model Number
(Boot Configuration Options)
00 = Uniform, 1 CE
20 = Top Boot, 1 CE
om
R
ec
2.1
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
S29WS-R Valid Combinations (Notes
1, 2)
Base Ordering
Part Number
S29WS512R
S29WS256R
S29WS128R
Notes:
1. Type 0 is standard. Specify other options as required.
2. BGA package marking omits leading
S29
and packing type designator from ordering part number.
0P, 0S, AA
BHW (Low-Halogen, Lead
(Pb)-free)
0, 2, 3
(Note 1)
00, 20
Speed
Option
Package Type, Material, &
Temperature Range
Packing
Type
Model
Numbers
Package Type
(Note 2)
11.6 mm x 8 mm
84-ball
MCP-Compatible
Product
Status
N
ot
m
en
Speed Option (Burst Frequency)
0P = 66 MHz
0S = 83 MHz
AA = 104 MHz
Process Technology
R = 65 nm MirrorBit Technology
Flash Density
512 =512 Mb
256 =256 Mb
128 =128 Mb
Device Family
S29WS =1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
de
Package Type And Material
BH = Very Thin Fine-Pitch BGA, Low-Halogen Lead (Pb)-free Package
d
fo
Temperature Range
W = Wireless (–25C to +85C)
rN
ew
Advance
Document Number: 002-01101 Rev. *I
D
es
ig
n
Page 5 of 77
京公网安备 11010802033920号
EEWORLD
