MMBT4401 datasheet, PDF - EEWORLD Datasheet

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MMBT4401: Description600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size268KB，6 Pages; ManufacturerKODENSHI; Websitehttp://www.kodenshi.co.jp

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MMBT4401 Overview

600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR

MMBT4401 Parametric

Parameter Name	Attribute value
Maker	KODENSHI
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Maximum off time (toff)	255 ns
Maximum opening time (tons)	35 ns

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MMBT4401

NPN Silicon Transistor

Descriptions

•

General purpose application

•

Switching application

PIN Connection

Features

•

Low Leakage current

•

Low collector saturation voltage enabling

low voltage operation

•

Complementary pair with MMBT4403

Ordering Information

Type NO.

MMBT4401

①Device

Code

SOT-23

Package Code

SOT-23

Marking

□

①②

②Year&

Week Code

Absolute maximum ratings

Characteristic

Collector-Base voltage

Collector-Emitter voltage

Emitter-base voltage

Collector current

Ta=25°C

Symbol

CBO

CEO

EBO

stg

Ratings

0.6

1.2

200

350

150

-55~150

Unit

A(DC)

A(Pulse)

°C

Collector dissipation

Junction temperature

Storage temperature range

* : Single pulse, tp= 300

㎲

** : Package mounted on 99.5% alumina 10×8×0.6mm

Characteristic

Thermal resistance

Junction-ambient

Symbol

th(J-A)

th(J-A)**

Typ.

Max

625.0

357.1

Unit

℃/W

KSD-T5C102-000

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