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GS84118GB-166T

Description
Cache Tag SRAM, 256KX18, 8.5ns, CMOS, PBGA119, PLASTIC, BGA-119
Categorystorage    storage   
File Size719KB,30 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance  
Download Datasheet Parametric View All

GS84118GB-166T Overview

Cache Tag SRAM, 256KX18, 8.5ns, CMOS, PBGA119, PLASTIC, BGA-119

GS84118GB-166T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGSI Technology
Parts packaging codeBGA
package instructionBGA,
Contacts119
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time8.5 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B119
JESD-609 codee1
length22 mm
memory density4718592 bit
Memory IC TypeCACHE TAG SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of terminals119
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX18
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height2.4 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
GS84118T/B-166/150/133/100
TQFP, BGA
Commercial Temp
Industrial Temp
Features
• 3.3 V +10%/–5% core power supply, 2.5 V or 3.3 V I/O
supply
• Intergrated data comparator for Tag RAM application
• FT mode pin for flow through or pipeline operation
• LBO pin for Linear or Interleave (Pentium
TM
and X86) Burst
mode
• Synchronous address, data I/O, and control inputs
• Synchronous Data Enable (DE)
• Asynchronous Output Enable (OE)
• Asynchronous Match Output Enable (MOE)
• Byte Write (BWE) and Global Write (GW) operation
• Three chip enable signals for easy depth expansion
• Internal self-timed write cycle
• JTAG Test mode conforms to IEEE standard 1149.1
• JEDEC-standard 100-lead TQFP package and 119-BGA:
T:TQFP or B: BGA
-166
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
t
cycle
t
KQ
I
DD
t
KQ
t
cycle
I
DD
6.0 ns
3.5 ns
310 mA
8.5 ns
10 ns
190 mA
-150
6.6 ns
3.8 ns
275 mA
10 ns
10 ns
190 mA
-133
7.5 ns
4.0 ns
250 mA
11 ns
15 ns
140 mA
-100
10 ns
4.5 ns
190 mA
12 ns
15 ns
140 mA
256K x 18 Sync
Cache Tag
166 MHz–100 MHz
8.5 ns–12 ns
3.3 V V
DD
3.3 V and 2.5 V I/O
Output registers and the Match output register are provided and
controlled by the FT mode pin (Pin 14). Through use of the FT
mode pin, I/O registers can be programmed to perform pipeline
or flow through operation. Flow Through mode reduces
latency.
Byte write operation is performed by using Byte Write Enable
(BWE) input combined with two individual byte write signals
BW1-2. In addition, Global Write (GW) is available for
writing all bytes at one time.
Compare cycles begin as a read cycle with output disabled so
that compare data can be loaded into the data input register.
The comparator compares the read data with the registered
input data and a match signal is generated. The match output
can be either in Pipeline or Flow Through modes controlled by
the FT signal.
Low power (Standby mode) is attained through the assertion of
the ZZ signal, or by stopping the clock (CLK). Memory data is
retained during Standby mode.
JTAG boundary scan interface is provided using IEEE
standard 1149.1 protocol. Four pins—Test Data In (TDI), Test
Data Out (TDO), Test Clock (TCK) and Test Mode Select
(TMS)—are used to perform JTAG function.
The GS84118 operates on a 3.3 V power supply and all inputs/
outputs are 3.3 V- or 2.5 V-LVTTL-compatible. Separate
output (V
DDQ
) pins are used to allow both 3.3 V or 2.5 V IO
interface.
Functional Description
The GS84118 is a 256K x 18 high performance synchronous
SRAM with integrated Tag RAM comparator. A 2-bit burst
counter is included to provide burst interface with Pentium
TM
and other high performance CPUs. It is designed to be used as
a Cache Tag SRAM, as well as data SRAM. Addresses, data
IOs, match output, chip enables (CE1, CE2, CE3), address
control inputs (ADSP, ADSC, ADV), and write control inputs
(BW1, BW2, BWE, GW, DE) are synchronous and are
controlled by a positive-edge-triggered clock (CLK).
Output Enable (OE), Match Output Enable, and power down
control (ZZ) are asynchronous. Burst can be initiated with
either ADSP or ADSC inputs. Subsequent burst addresses are
generated internally and are controlled by ADV. The burst
sequence is either interleave order (Pentium
TM
or x86) or
linear order, and is controlled by LBO.
Rev: 1.05 7/2001
1/30
* Pentium is a trademark of Intel Corp.
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Trademark Notice (if any) Trademark of Giga Semiconductor, Inc. (GSI Technology).

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