NAND02GW3B3AN6E datasheet, PDF

NAND02GW3B3AN6E: Description256MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48; Categorystorage storage; File Size1MB，59 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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NAND02GW3B3AN6E Overview

256MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	TSOP
package instruction	TSOP1, TSSOP48,.8,20
Contacts	48
Reach Compliance Code	unknown
ECCN code	3A991.B.1.A
Maximum access time	35 ns
command user interface	YES
Data polling	NO
JESD-30 code	R-PDSO-G48
JESD-609 code	e3/e6
length	18.4 mm
memory density	2147483648 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	2K
Number of terminals	48
word count	268435456 words
character code	256000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
page size	2K words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3/3.3 V
Programming voltage	3 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Department size	128K
Maximum standby current	0.00005 A
Maximum slew rate	0.02 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN/TIN BISMUTH
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
width	12 mm

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