U633H04SC25 datasheet, PDF - EEWORLD Datasheet

U633H04SC25: DescriptionNon-Volatile SRAM, 512X8, 25ns, CMOS, PDSO24, 0.300 INCH, SOP-24; Categorystorage storage; File Size287KB，13 Pages; ManufacturerZentrum Mikroelektronik Dresden AG (IDT)

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U633H04SC25 Overview

Non-Volatile SRAM, 512X8, 25ns, CMOS, PDSO24, 0.300 INCH, SOP-24

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Zentrum Mikroelektronik Dresden AG (IDT)
Parts packaging code	SOIC
package instruction	SOP,
Contacts	24
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	25 ns
JESD-30 code	R-PDSO-G24
JESD-609 code	e0
length	15.4 mm
memory density	4096 bit
Memory IC Type	NON-VOLATILE SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	24
word count	512 words
character code	512
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512X8
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	225
Certification status	Not Qualified
Maximum seat height	2.65 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	7.5 mm

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