Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SS-MINI PACKAGE-3
Parameter Name | Attribute value |
Maker | Panasonic |
package instruction | SMALL OUTLINE, R-PDSO-G3 |
Contacts | 3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | BUILT IN BIAS RESISTOR |
Maximum collector current (IC) | 0.1 A |
Collector-emitter maximum voltage | 50 V |
Configuration | SINGLE WITH BUILT-IN RESISTOR |
Minimum DC current gain (hFE) | 210 |
JESD-30 code | R-PDSO-G3 |
Number of components | 1 |
Number of terminals | 3 |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | PNP |
Maximum power dissipation(Abs) | 0.125 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 150 MHz |
UN9117R | UN9116S | UN9117Q | UN9115R | UN9116R | UN9110R | UN9115S | UN9110S | UN9110Q | |
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Description | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SS-MINI PACKAGE-3 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SS-MINI PACKAGE-3 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SS-MINI PACKAGE-3 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SS-MINI PACKAGE-3 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SS-MINI PACKAGE-3 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SS-MINI PACKAGE-3 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SS-MINI PACKAGE-3 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SS-MINI PACKAGE-3 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SS-MINI PACKAGE-3 |
package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
Contacts | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Other features | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTOR |
Maximum collector current (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
Collector-emitter maximum voltage | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V | 50 V |
Configuration | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
Minimum DC current gain (hFE) | 210 | 290 | 160 | 210 | 210 | 210 | 290 | 290 | 160 |
JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
Polarity/channel type | PNP | PNP | PNP | PNP | PNP | PNP | PNP | PNP | PNP |
Maximum power dissipation(Abs) | 0.125 W | 0.125 W | 0.125 W | 0.125 W | 0.125 W | 0.125 W | 0.125 W | 0.125 W | 0.125 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | YES | YES | YES | YES | YES | YES | YES | YES | YES |
Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz |
Maker | Panasonic | - | Panasonic | Panasonic | Panasonic | Panasonic | Panasonic | Panasonic | Panasonic |