RT1P431S datasheet, PDF - EEWORLD Datasheet

RT1P431S: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon; CategoryDiscrete semiconductor The transistor; File Size163KB，1 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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RT1P431S Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

Parameter Name	Attribute value
Maker	Mitsubishi
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	50
Number of components	1
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Certification status	Not Qualified
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

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