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K8C5615ETM-FE1C0

Description
Flash, 16MX16, 100ns, PBGA167, 10.50 X 14 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FBGA-167
Categorystorage    storage   
File Size1MB,54 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K8C5615ETM-FE1C0 Overview

Flash, 16MX16, 100ns, PBGA167, 10.50 X 14 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FBGA-167

K8C5615ETM-FE1C0 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeBGA
package instruction10.50 X 14 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FBGA-167
Contacts167
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time100 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PBGA-B167
JESD-609 codee0
length14 mm
memory density268435456 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size4,255
Number of terminals167
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeLFBGA
Encapsulate equivalent codeBGA167,12X15,32
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
power supply1.8 V
Programming voltage1.8 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.4 mm
Department size16K,64K
Maximum standby current0.00002 A
Maximum slew rate0.055 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
switch bitYES
typeNOR TYPE
width10.5 mm

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