V23990-P585-*2*-PM
flow1
Features
●
3~rectifier, optional BRC, Inverter, NTC
●
Very compact housing, easy to route
●
IGBT4 / EmCon4 technology for low saturation losses
and improved EMC behaviour
Solder pins
Press fit pins
600V/30A
flow1
Target Applications
●
Industrial drives
●
Embedded drives
Schematic
Types
●
V23990-P585-A20-PM
●
V23990-P585-A20Y-PM
●
V23990-P585-A208-PM
●
V23990-P585-C20-PM
●
V23990-P585-C20Y-PM
Maximum Ratings
C,
T
j
=25° unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
It
P
tot
T
j
max
2
1600
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
33
47
250
C
T
j
=25°
310
C
T
h
=80°
T
c
=80°
C
37
60
150
V
A
A
A
2
s
W
°
C
t
p
=10ms
50 Hz half sine wave
T
j
=T
j
max
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
V
CE
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
V
CE
≤
1200V, T
j
≤
T
op
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
600
30
39
90
90
55
84
±20
6
360
175
V
A
A
A
W
V
µs
V
°
C
copyright Vincotech
1
Revision: 2
V23990-P585-*2*-PM
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
C
T
h
=80°
C
T
c
=80°
T
h
=80°
C
C
T
c
=80°
600
25
33
60
46
69
175
V
A
A
W
°
C
Brake Transistor
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
V
CE
I
C
I
Cpuls
T
j
=T
j
max
t
p
limited by T
j
max
V
CE
≤
1200V, T
j
≤
T
op
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
600
22
28
60
65
45
68
±20
6
360
175
V
A
A
A
W
V
µs
V
°
C
Brake Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
600
14
19
40
20
30
175
V
A
A
W
°
C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°
C
°
C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Comparative tracking index
CTI
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
mm
mm
copyright Vincotech
2
Revision: 2
V23990-P585-*2*-PM
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
V
F
V
to
r
t
I
r
Thermal grease
thickness≤50um
λ
= 1 W/mK
Preapplied
Phase change
material
1500
30
30
30
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=150°
C
0,8
1,16
1,13
0,90
0,78
8
11
1,6
V
V
m
2
mA
Thermal resistance chip to heatsink per chip
R
thJH
1,89
K/W
Thermal resistance chip to heatsink per chip
R
thJH
1,17
K/W
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
= 1 W/mK
Preapplied
Phase change
material
15
480
30
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
Rgoff=16
Rgon=16
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
V
CE
=V
GE
15
0
20
600
0
0,00043
30
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
4,1
1,1
4,9
1,70
1,77
0,04
1
5,7
1,9
V
V
mA
300
nA
-
93
93,5
15
17,5
141
159,5
67,1
86,7
0,42
0,63
0,59
0,80
ns
15
300
30
mWs
1630
108
50
167
nC
pF
Thermal resistance chip to heatsink per chip
R
thJH
1,6
K/W
Thermal resistance chip to heatsink per chip
R
thJH
1,37
K/W
copyright Vincotech
3
Revision: 2
V23990-P585-*2*-PM
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
30
Rgon=16
-15
300
30
Erec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Preapplied
Phase change
material
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1,25
1,75
1,70
29
34
35
183
1,20
2,16
2200
1576
0,23
0,45
1,95
V
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
2,07
K/W
Thermal resistance chip to heatsink per chip
R
thJH
1,78
K/W
Brake Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
= 1 W/mK
Preapplied
Phase change
material
15
480
20
Tj=25°
C
f=1MHz
0
25
20
Tj=25°
C
Rgoff=32
Rgon=32
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
V
CE
=V
GE
15
0
20
600
0
0,00029
20
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
5
1,1
5,8
1,55
1,75
6,5
1,9
0,04
1
300
V
V
mA
nA
-
126
128
18
21
161
179
105
114
0,44
0,59
0,49
0,63
ns
±15
300
20
mWs
1100
71
32
120
nC
pF
Thermal resistance chip to heatsink per chip
R
thJH
2,12
K/W
Thermal resistance chip to heatsink per chip
R
thJH
1,83
K/W
copyright Vincotech
4
Revision: 2
V23990-P585-*2*-PM
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Brake Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
20
600
Rgon=32
Rgon=32
-15
300
20
E
rec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Preapplied
Phase change
material
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1,25
1,43
1,29
1,95
27
V
µA
A
ns
µC
A/µs
mWs
10
11
28
134
0,29
0,29
1247
443
0,051
0,100
Thermal resistance chip to heatsink per chip
R
thJH
3,53
K/W
Thermal resistance chip to heatsink per chip
R
thJH
3,07
K/W
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
Tol. ±3%
R
∆R/R
P
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
-5
200
2
3950
3996
B
22000
5
%
mW
mW/K
K
K
copyright Vincotech
5
Revision: 2
MEMS sensors
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