W-IXGD40N30A datasheet, PDF - EEWORLD Datasheet

W-IXGD40N30A: DescriptionInsulated Gate Bipolar Transistor, 300V V(BR)CES, N-Channel; CategoryDiscrete semiconductor The transistor; File Size163KB，1 Pages; ManufacturerIXYS

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W-IXGD40N30A Overview

Insulated Gate Bipolar Transistor, 300V V(BR)CES, N-Channel

Parameter Name	Attribute value
Maker	IXYS
package instruction	UNCASED CHIP, R-XUUC-N2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH SPEED
Shell connection	COLLECTOR
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
JESD-30 code	R-XUUC-N2
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Transistor component materials	SILICON

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