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DMN3042L-13

Description
Small Signal Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size331KB,6 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric View All

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DMN3042L-13 Overview

Small Signal Field-Effect Transistor,

DMN3042L-13 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time23 weeks
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)5.8 A
Maximum drain-source on-resistance0.0265 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)80 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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