BCY58CDWP datasheet, PDF - EEWORLD Datasheet

BCY58CDWP: DescriptionSmall Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, NPN, Silicon, 0.015 X 0.015 INCH, G1, DIE-2; CategoryDiscrete semiconductor The transistor; File Size45KB，1 Pages; ManufacturerDiodes Incorporated

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Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, NPN, Silicon, 0.015 X 0.015 INCH, G1, DIE-2

Parameter Name	Attribute value
Maker	Diodes Incorporated
Parts packaging code	DIE
package instruction	UNCASED CHIP, S-XUUC-N2
Contacts	2
Reach Compliance Code	unknown
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	250
JESD-30 code	S-XUUC-N2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	125 MHz

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