NDS352P_NL datasheet, PDF - EEWORLD Datasheet

NDS352P_NL: DescriptionSmall Signal Field-Effect Transistor, 0.85A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-3; CategoryDiscrete semiconductor The transistor; File Size83KB，7 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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NDS352P_NL Overview

Small Signal Field-Effect Transistor, 0.85A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-3

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Manufacturer packaging code	SUPERSOT
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (Abs) (ID)	0.85 A
Maximum drain current (ID)	0.85 A
Maximum drain-source on-resistance	0.35 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	500 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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