IS45S81600B-7TLA1 datasheet, PDF

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IS45S81600B-7TLA1: DescriptionSynchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54; Categorystorage storage; File Size567KB，59 Pages; ManufacturerIntegrated Silicon Solution ( ISSI ); Environmental Compliance

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IS45S81600B-7TLA1 Overview

Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54

IS45S81600B-7TLA1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP54,.46,32
Contacts	54
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	143 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
JESD-609 code	e3
length	22.22 mm
memory density	134217728 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	54
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	16MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.001 A
Maximum slew rate	0.16 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Matte Tin (Sn) - annealed
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	10.16 mm

IS45S81600B-7TLA1 Related Products

	IS45S81600B-7TLA1	IS45S81600B-7TA1	IS45S16800B-7TA1
Description	Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, LEAD FREE, PLASTIC, TSOP2-54	Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54, PLASTIC, TSOP2-54	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54, PLASTIC, TSOP2-54
Is it Rohs certified?	conform to	incompatible	incompatible
Maker	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Parts packaging code	TSOP2	TSOP2	TSOP2
package instruction	TSOP2, TSOP54,.46,32	PLASTIC, TSOP2-54	PLASTIC, TSOP2-54
Contacts	54	54	54
Reach Compliance Code	compliant	unknown	unknow
ECCN code	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	5.4 ns	5.4 ns	5.4 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	143 MHz	143 MHz	143 MHz
I/O type	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54
JESD-609 code	e3	e0	e0
length	22.22 mm	22.22 mm	22.22 mm
memory density	134217728 bit	134217728 bit	134217728 bi
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	8	8	16
Humidity sensitivity level	3	3	3
Number of functions	1	1	1
Number of ports	1	1	1
Number of terminals	54	54	54
word count	16777216 words	16777216 words	8388608 words
character code	16000000	16000000	8000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
organize	16MX8	16MX8	8MX16
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	TSOP2	TSOP2
Encapsulate equivalent code	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096
Maximum seat height	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.001 A	0.001 A	0.001 A
Maximum slew rate	0.16 mA	0.16 mA	0.16 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES
technology	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Matte Tin (Sn) - annealed	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	NOT SPECIFIED	NOT SPECIFIED
width	10.16 mm	10.16 mm	10.16 mm

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