Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, Metal, 3 Pin
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Zetex Semiconductors |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 1 A |
| Collector-based maximum capacity | 6 pF |
| Collector-emitter maximum voltage | 60 V |
| Configuration | DARLINGTON |
| Minimum DC current gain (hFE) | 1000 |
| JEDEC-95 code | TO-39 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | 235 |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 5 W |
| Certification status | Not Qualified |
| Guideline | CECC |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 80 MHz |
| VCEsat-Max | 1.6 V |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD