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HYB25D1G800AEL-5

Description
DDR DRAM, 128MX8, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66
Categorystorage    storage   
File Size3MB,85 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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HYB25D1G800AEL-5 Overview

DDR DRAM, 128MX8, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66

HYB25D1G800AEL-5 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTSOP2
package instructionTSOP2,
Contacts66
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.7 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-PDSO-G66
JESD-609 codee3
length22.22 mm
memory density1073741824 bit
Memory IC TypeDDR DRAM
memory width8
Number of functions1
Number of ports1
Number of terminals66
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)2.6 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width10.16 mm
D a t a S he et , V 0. 5, J u l y 2 00 3
H Y B 25 D 1 G 4 0 0 A [ C / E / F / T ] ( L )
H Y B 25 D 1 G 8 0 0 A [ C / E / F / T ] ( L )
H Y B 25 D 1 G 1 6 0 A [ C / E / F / T ] ( L )
1 - G b i t D o u b l e D a ta R a t e S D R A M
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