IC 128K X 8 STANDARD SRAM, 20 ns, CQCC32, CERAMIC, LCC-32, Static RAM
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | National Semiconductor（TI ） |
| package instruction | QCCN, LCC32,.45X.7 |
| Reach Compliance Code | unknown |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 20 ns |
| I/O type | COMMON |
| JESD-30 code | R-CQCC-N32 |
| JESD-609 code | e0 |
| memory density | 1048576 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 32 |
| word count | 131072 words |
| character code | 128000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 128KX8 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | QCCN |
| Encapsulate equivalent code | LCC32,.45X.7 |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Certification status | Not Qualified |
| Filter level | 38535Q/M;38534H;883B |
| Maximum standby current | 0.001 A |
| Minimum standby current | 2 V |
| Maximum slew rate | 0.175 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | NO LEAD |
| Terminal pitch | 1.27 mm |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
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