Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
| Parameter Name | Attribute value |
| Maker | Micro Electronics |
| package instruction | CYLINDRICAL, O-PBCY-W3 |
| Reach Compliance Code | unknown |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 20 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 40 |
| JEDEC-95 code | TO-92 |
| JESD-30 code | O-PBCY-W3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 135 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.3 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 125 MHz |
| BC349 | BC333 | BC383L | BC385 | BC386 | BC447 | BC330 | BC335 | |
|---|---|---|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, | Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, |
| Reach Compliance Code | unknown | unknow | unknown | unknown | unknown | unknown | unknown | unknown |
| Maker | Micro Electronics | Micro Electronics | - | - | - | Micro Electronics | Micro Electronics | Micro Electronics |
| Maximum collector current (IC) | 0.1 A | 0.05 A | 0.1 A | 0.1 A | 0.1 A | - | 0.03 A | 0.05 A |
| Collector-emitter maximum voltage | 20 V | 25 V | 30 V | 45 V | 20 V | - | 45 V | 25 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 40 | 100 | 100 | 100 | 100 | - | 220 | 100 |
| JEDEC-95 code | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | - | TO-92 | TO-92 |
| JESD-30 code | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | - | O-PBCY-W3 | O-PBCY-W3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | - | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | - | 3 | 3 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | - | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | - | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | - | NPN | NPN |
| Maximum power dissipation(Abs) | 0.3 W | 0.31 W | 0.3 W | 0.3 W | 0.3 W | - | 0.25 W | 0.31 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | - | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | - | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | - | BOTTOM | BOTTOM |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | - | AMPLIFIER | AMPLIFIER |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | - | SILICON | SILICON |
| Nominal transition frequency (fT) | 125 MHz | 50 MHz | 150 MHz | 150 MHz | 150 MHz | - | 100 MHz | 50 MHz |
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