SD10425JAAEHD1Z datasheet, PDF

SD10425JAAEHD1Z: DescriptionPower Field-Effect Transistor, 2A I(D), 667V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size59KB，1 Pages; ManufacturerSolitron Devices Inc.

Download Datasheet Parametric View All

SD10425JAAEHD1Z Overview

Power Field-Effect Transistor, 2A I(D), 667V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN

Parameter Name	Attribute value
Maker	Solitron Devices Inc.
Parts packaging code	TO-254AA
package instruction	FLANGE MOUNT, S-MSFM-P3
Contacts	3
Reach Compliance Code	unknown
Other features	CUSTOM BENT LEAD OPTIONS ARE AVAILABLE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	667 V
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	75 W
Maximum pulsed drain current (IDM)	8 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Transistor component materials	SILICON
Maximum off time (toff)	135 ns
Maximum opening time (tons)	65 ns

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components