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M5M4V4170J-8ST

Description
Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40
Categorystorage    storage   
File Size2MB,29 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

M5M4V4170J-8ST Overview

Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40

M5M4V4170J-8ST Parametric

Parameter NameAttribute value
MakerMitsubishi
Parts packaging codeSOJ
package instructionSOJ,
Contacts40
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time80 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
JESD-30 codeR-PDSO-J40
length26.04 mm
memory density4194304 bit
Memory IC TypeFAST PAGE DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals40
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
refresh cycle1024
Maximum seat height3.55 mm
self refreshYES
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
width10.16 mm
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