EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Vanguard International Semiconductor Corporation |
Parts packaging code | TSOP2 |
package instruction | TSOP2, TSOP44/50,.46,32 |
Contacts | 50 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
access mode | FAST PAGE WITH EDO |
Maximum access time | 60 ns |
Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH |
I/O type | COMMON |
JESD-30 code | R-PDSO-G44 |
JESD-609 code | e0 |
length | 20.95 mm |
memory density | 16777216 bit |
Memory IC Type | EDO DRAM |
memory width | 16 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 44 |
word count | 1048576 words |
character code | 1000000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 1MX16 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | TSOP2 |
Encapsulate equivalent code | TSOP44/50,.46,32 |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE, THIN PROFILE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 3.3 V |
Certification status | Not Qualified |
refresh cycle | 1024 |
Maximum seat height | 1.2 mm |
self refresh | NO |
Maximum standby current | 0.0005 A |
Maximum slew rate | 0.145 mA |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 3 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING |
Terminal pitch | 0.8 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 10.16 mm |
VG26V18165DT-6 | VG26VS18165DJ-5 | VG26VS18165DJ-6 | VG26V18165DJ-5 | VG26V18165DJ-6 | VG26V18165DT-5 | VG26VS18165DT-5 | VG26VS18165DT-6 | |
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Description | EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44 | EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 | EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, SOJ-42 | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44 | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44 | EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44 |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
Parts packaging code | TSOP2 | SOJ | SOJ | SOJ | SOJ | TSOP2 | TSOP2 | TSOP2 |
package instruction | TSOP2, TSOP44/50,.46,32 | SOJ, SOJ42,.44 | SOJ, SOJ42,.44 | SOJ, SOJ42,.44 | SOJ, SOJ42,.44 | TSOP2, TSOP44/50,.46,32 | 0.400 INCH, TSOP2-50/44 | TSOP2, TSOP44/50,.46,32 |
Contacts | 50 | 42 | 42 | 42 | 42 | 50 | 50 | 50 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
access mode | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO |
Maximum access time | 60 ns | 50 ns | 60 ns | 50 ns | 60 ns | 50 ns | 50 ns | 60 ns |
Other features | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | R-PDSO-G44 | R-PDSO-J42 | R-PDSO-J42 | R-PDSO-J42 | R-PDSO-J42 | R-PDSO-G44 | R-PDSO-G44 | R-PDSO-G44 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
length | 20.95 mm | 27.31 mm | 27.31 mm | 27.31 mm | 27.31 mm | 20.95 mm | 20.95 mm | 20.95 mm |
memory density | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bi |
Memory IC Type | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM |
memory width | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 |
Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of ports | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 44 | 42 | 42 | 42 | 42 | 44 | 44 | 44 |
word count | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
character code | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 |
Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
organize | 1MX16 | 1MX16 | 1MX16 | 1MX16 | 1MX16 | 1MX16 | 1MX16 | 1MX16 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | TSOP2 | SOJ | SOJ | SOJ | SOJ | TSOP2 | TSOP2 | TSOP2 |
Encapsulate equivalent code | TSOP44/50,.46,32 | SOJ42,.44 | SOJ42,.44 | SOJ42,.44 | SOJ42,.44 | TSOP44/50,.46,32 | TSOP44/50,.46,32 | TSOP44/50,.46,32 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
power supply | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
refresh cycle | 1024 | 1024 | 1024 | 1024 | 1024 | 1024 | 1024 | 1024 |
Maximum seat height | 1.2 mm | 3.76 mm | 3.76 mm | 3.76 mm | 3.76 mm | 1.2 mm | 1.2 mm | 1.2 mm |
self refresh | NO | YES | YES | NO | NO | NO | YES | YES |
Maximum standby current | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A | 0.0005 A |
Maximum slew rate | 0.145 mA | 0.16 mA | 0.145 mA | 0.16 mA | 0.145 mA | 0.16 mA | 0.16 mA | 0.145 mA |
Maximum supply voltage (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
Minimum supply voltage (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
surface mount | YES | YES | YES | YES | YES | YES | YES | YES |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | GULL WING | J BEND | J BEND | J BEND | J BEND | GULL WING | GULL WING | GULL WING |
Terminal pitch | 0.8 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 0.8 mm | 0.8 mm | 0.8 mm |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
width | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm | 10.16 mm |
Maker | Vanguard International Semiconductor Corporation | - | Vanguard International Semiconductor Corporation | Vanguard International Semiconductor Corporation | Vanguard International Semiconductor Corporation | Vanguard International Semiconductor Corporation | Vanguard International Semiconductor Corporation | Vanguard International Semiconductor Corporation |