Standard SRAM, 64KX1, 70ns, CMOS, CDIP22, 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-22
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Pyramid Semiconductor Corporation |
| Parts packaging code | DIP |
| package instruction | 0.300 INCH, SIDE BRAZED, CERAMIC, DIP-22 |
| Contacts | 22 |
| Reach Compliance Code | compliant |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 70 ns |
| JESD-30 code | R-CDIP-T22 |
| JESD-609 code | e0 |
| length | 29.337 mm |
| memory density | 65536 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 1 |
| Number of functions | 1 |
| Number of terminals | 22 |
| word count | 65536 words |
| character code | 64000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 64KX1 |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | DIP |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Filter level | MIL-STD-883 Class B |
| Maximum seat height | 5.08 mm |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 7.62 mm |
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