DIGITRON SEMICONDUCTORS
MCR64 SERIES
SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive forward and reverse blocking voltage
(1)
(T
J
= 25 to +125°C, gate open)
MCR64-1
MCR64-2
MCR64-3
MCR64-4
MCR64-5
MCR64-6
MCR64-7
MCR64-8
MCR64-9
MCR64-10
Non-repetitive peak reverse blocking voltage
(t
≤
5ms)
(1)
MCR64-1
MCR64-2
MCR64-3
MCR64-4
MCR64-5
MCR64-6
MCR64-7
MCR64-8
MCR64-9
MCR64-10
Forward current RMS
Peak surge current
(one cycle, 60Hz, T
C
= -40 to +125°C)
Circuit fusing considerations
(t = 8.3ms)
Peak gate power
Average gate power
(Pulse width
≤
2µs)
Peak forward gate current
Forward peak gate voltage
Reverse peak gate voltage
Operating junction temperature range
Storage temperature range
Mounting torque
Symbol
Value
Unit
V
RRM
, V
DRM
25
50
100
200
300
400
500
600
700
800
Volts
V
RSM
35
75
150
300
400
500
600
700
800
900
55
550
1255
20
0.5
2
10
-40 to +125
-40 to +150
30
Volts
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GFM
V
GRM
T
J
T
stg
Amps
Amps
A
2
s
Watts
Watts
Amps
Volts
°C
°C
In. lb.
Note 1: V
DRM
and V
RRM
for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices shall not have a
positive bias applied to the gate concurrently with a negative potential on the anode.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Pressfit
Symbol
R
ӨJC
Maximum
1
Unit
°C/W
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130128
DIGITRON SEMICONDUCTORS
MCR64 SERIES
Characteristic
Peak forward or reverse blocking current
(V
AK
= Rated V
DRM
or V
RRM
, gate open)
T
C
= 25°C
T
C
= 125°C
Forward “on” voltage
(I
TM
= 175A peak)
Gate trigger current
(continuous dc)
(V
D
= 12V, R
L
= 50Ω)
T
C
= 25°C
T
C
= -40°C
Gate trigger voltage
(continuous dc)
(V
D
= 12V, R
L
= 50Ω)
T
C
= 25°C
T
C
= -40°C
(V
D
= Rated V
DRM
, R
L
= 1000Ω, T
J
= 125°C)
Holding current
(V
D
= 12V, R
L
= 50Ω, gate open)
Forward voltage application rate
(V
D
= rated V
DRM
, T
J
= 125°C)
SILICON CONTROLLED RECTIFIER
Symbol
Min.
Max.
Unit
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
I
DRM
, I
RRM
-
-
-
10
2
2
µA
mA
Volts
V
TM
I
GT
-
-
40
75
mA
V
GT
-
-
0.2
-
50
3
3.5
-
60
-
Volts
I
H
dv/dt
mA
V/µs
MECHANICAL CHARACTERISTICS
Case
Marking
Polarity
TO-48
Body painted, alpha-numeric
Cathode is stud
TO-48
Inches
Min
Max
0.604
0.614
0.551
0.559
1.050
1.190
0.135
0.160
-
0.265
0.420
0.455
0.620
0.670
0.300
0.350
0.055
0.085
0.501
0.505
Millimeters
Min
Max
15.340
15.600
14.000
14.200
2.670
30.230
3.430
4.060
-
6.730
10.670
11.560
15.750
17.020
7.620
8.890
1.400
2.160
12.730
12.830
A
B
C
F
H
J
K
L
Q
T
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130128
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