EEWORLDEEWORLDEEWORLD

Part Number

Search

STPS260CE

Description
1A, 60V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size28KB,3 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

STPS260CE Overview

1A, 60V, 2 ELEMENT, SILICON, SIGNAL DIODE

STPS260CE Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.91 V
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Maximum non-repetitive peak forward current10 A
Number of components2
Number of terminals4
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage60 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

STPS260CE Preview

STPS260CE
SCHOTTKY RECTIFIER
.
.
.
.
.
.
PRELIMINARY DATASHEET
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
EXTREMELY FAST SWITCHING
SURFACE MOUNTED DEVICE
A
1
K
A
2
1
2
3
4
=
=
=
=
A
1
K
A
2
K
DESCRIPTION
Dual center tap schottky rectifier suited for switch-
mode power supply and high frequency DC to DC
converters.
Packaged in SOT 223, this device is intended for
surface mounting and use in low voltage, high fre-
quency inverters, free wheeling and polarity protec-
tion applications.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
Tstg
Tj
dV/dt
Parameter
Repetitive Peak Reverse Voltage
RMS Forward Current
Average Forward Current
Surge Non Repetitive Forward Current
Peak Repetitive Reverse Current
Storage and Junction Temperature Range
Critical Rate of Rise of Reverse Voltage
T
L
= 130°C
δ
= 0.5
tp = 10 ms
Sinusoidal
tp = 2
µs
F = 1KHz
Per diode
Per diode
Per device
Per diode
Per diode
SOT 223
(Plastic)
Value
60
1.4
1
2
10
1
- 65 to + 150
- 65 to + 150
1000
Unit
V
A
A
A
A
°C
V/µs
THERMAL RESISTANCE
Symbol
R
TH (j-t)
R
TH (j-a
)
R
TH (c)
Junction to Tab for D.C
Junction to Ambient with 5cm
2
Copper Surface Under Tab
Coupling
Parameter
Total
Per diode
Value
12
20
55
5
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously :
T
J
(diode 1) = P(diode1) x R
TH
(Per diode) + P(diode 2) x R
TH(c)
March 1992
1/3
STPS260CE
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS ( Per diode )
Symbol
I
R
**
Tj = 25°C
Tj = 100°C
V
F
*
Tj = 125°C
Tj = 125°C
Tj = 25°C
I
F
= 2 A
I
F
= 1 A
I
F
= 2 A
Tests Conditions
V
R
= V
RRM
Min.
Typ.
Max.
500
8
0.82
0.65
0.91
Unit
µA
mA
V
Pulse test :
* tp = 380
µs,
duty cycle < 2 %
** tp = 5 ms, duty cycle < 2%
To evaluate the conduction losses use the following equation :
P = 0.48 x I
F(AV)
+ 0.17 I
F2(RMS)
Voltage (V)
Markin g
60
T26
2/3
STPS260CE
PACKAGE MECHANICAL DATA
SOT223
3.3
DIMENSIONS
REF.
Millimeters
6.30
6.70
3.30
6.50
7.00
3.50
4.60
2.30
3.00
0.70
1.60
0.45
0.60
0.65
0.05
Inches
Min. Typ. Max. Min. Typ. Max.
1.5
1.2
(3x)
2.3
6.4
1.5
4.6
R ec ommended soldering pattern SOT223
A
B
C
D
E
F
G
H
I
J
K
L
M
2.90
0.60
1.50
0.43
0.50
0.63
6.70 0.248 0.256 0.264
7.30 0.264 0.275 0.287
3.70 0.130 0.139 0.146
0.181
0.090
3.10 0.114 0.118 0.122
0.80 0.023 0.027 0.031
1.70 0.059 0.063 0.067
0.47 0.017 0.018 0.019
0.70 0.019 0.023 0.027
0.67 0.024 0.025 0.026
0.002
0.32
0.012
B
A
15°(4x)
H
0°/7°
I
D
F
E
C
J
K
L
M
G
Marking : Type number
Weight : 0.11 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
©
1994 SGS-THOMSON Microelectronics - All Rights Reserved
TURBOSWITCH, TRANSIL, TRISIL, SNUBBERLESS are Trademarks of SGS-THOMSON Microelectronics.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
3/3

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号