SiBar Thyristor
Surge Protectors
SA and SC series thyristor products for overvoltage protection
SiBar thyristor surge protectors
provide transient voltage protection
for telecommunications applications.
Tyco Electronics SiBar
®
thyristor
surge protectors are designed to
protect sensitive telecommunications
equipment from the hazards caused
by lightning, power contact, and power
induction. These devices have high
surge capability to protect against
transient faults and high off-state
impedance, rendering them
transparent during normal system
operation.
Benefits:
• Effective protection for sensitive
telecom electronics
• Low leakage current
• Low power dissipation
• Fast, reliable operation
• No wear-out mechanisms
• Helps designers meet worldwide
telecom standards
• Reduced warranty and service costs
• Easy installation; tape and reel per
EIA 481 standards
Target Applications:
SiBar thyristor surge protectors are
designed specifically for
telecommunications and computer
telephony applications, including:
• Modems
• Fax machines
• PBX systems
• Phones
• POS systems
• Analog and digital linecards
• xDSL modes and splitters
• Other customer premise and
network equipment requiring
protection
Features:
• Bidirectional transient voltage protection
• High off-state impedance
• Low on-state voltage
• High surge capability
• Glass-passivated junctions
• Short-circuit failure mode
• Surface-mount technology
Fundamentals of SiBar Thyristor Surge Protection Devices
SiBar thyristor surge protectors are
bidirectional silicon devices that fold back in
the presence of transient overvoltage faults.
When the breakover voltage of a SiBar device
is exceeded, the device switches from high to
low impedance to protect sensitive
downstream equipment from harmful voltage
surges. The device remains latched in a low-
impedance state until the current decreases
below the hold current, at which point the
device returns to its high-impedance state.
SiBar devices may be used in conjunction
with PolySwitch
®
resettable fuses in
telecommunications applications, including
network equipment, customer premise
equipment, and primary protectors. Proper
selection of both devices can provide reliable
and cost-effective resettable overvoltage and
overcurrent protection. These devices help
designers to meet worldwide
telecommunications standards and to lower
equipment-service and warranty costs.
Typical applications
Problem/solution
Industry standards and customer
specifications require telecommunications
equipment designers to protect against the
harmful effects of power cross, power
induction, and lightning surges. These
hazards can travel through the network and
local loop, resulting in equipment damage and
loss of service.
A SiBar thyristor surge protector, either by
itself or properly coordinated with a
PolySwitch overcurrent device, will assist in
protecting against these faults, minimizing
equipment damage and improving customer
satisfaction.
Customer premise equipment (CPE)
SiBar devices have been designed to assist
customer premise equipment manufacturers
meet the stringent requirements of
FCC part 68, UL1459/UL1950 3rd Edition,
UL497A, and ITU-T Recommendation K.21.
Examples of customer premise equipment
include:
• PBX systems
• Key telephone systems
• Modems
• Phone sets
• POS equipment
• Surge strips with communication ports
Network equipment
SiBar devices have been designed to assist
network equipment manufacturers meet the
stringent requirements of Telcordia GR-1089,
ITU-T Recommendations K.17, K.20, and K.45.
Examples of network equipment include:
• Analog and digital linecards
• Base stations
• Meter monitoring systems
• Multiplex/pairgain systems
• Remote terminal units
• Repeaters
Customer premise equipment protected with
SiBar and PolySwitch devices
Ungrounded
T
Grounded
T
Network equipment protected with SiBar and
PolySwitch devices
Grounded
T
Z
Z
R
Symbol key:
CPE
CPE
Z
Z
Z
R
Note:
T-R SiBar thyristor is optional;
refer to SiBar application notes
(www.circuitprotection.com)
Linecard
Z
R
Z
SiBar thyristor surge protector (transient voltage protector)
PolySwitch resettable fuse (overcurrent protection device)
SiBar thyristor surge protectors and PolySwitch resettable fuses are designed to work together to effectively protect telecommunications equipment
from transient overcurrent and overvoltage faults defined by regional agency specifications.
Specifications
ITU-T K.20
ITU-T K.21
ITU-T K.45
FCC Part 68
UL 1459*
UL 1950
Telcordia GR1089
Telcordia GR1089 Intrabuilding
PolySwitch Resettable Fuse
TR250, TS250, TSV250
TR250, TS250, TSV250
TR250, TS250, TSV250
TR600-150, TS600-170
TR600-150, TS600-170
TR600-150, TS600-170
TR600-160-RA, TS600-200-RA
TR250, TS250, TSV250
SiBar Surge Protector
TVB170SA, TVB200SA, TVB270SA
TVB170SA, TVB200SA, TVB270SA
TVB170SA, TVB200SA, TVB270SA
TVB270SA
TVB270SA
TVB270SA
TVB170SC, TVB200SC, TVB270SC
TVB170SA, TVB200SA, TVB270SA
* Superseded by UL 1950, 3rd Edition for new designs.
Note: For more information on PolySwitch resettable fuses for overcurrent protection, please contact your local Raychem representative or visit our Web site
(www.circuitprotection.com)
Selection Guide
Follow these steps to select the proper SiBar
thyristor surge protectors for your application:
1. Define the operating parameters for
the circuit:
• Maximum ambient operating
temperature
• Maximum system operating current
• Maximum operating voltage
(DC bias + peak ringing voltage)
• Maximum fault current
• System voltage damage threshold
2. Select a SiBar device with an off-state voltage
rating (V
DM
) above the maximum operating
voltage and a peak pulse current rating above
the maximum fault current.
3. Verify that the minimum hold current of the
device is above the maximum short-circuit
current of the system.
4. Verify that the maximum breakover voltage of
the device is below the system damage
threshold.
5. Verify that the circuit’s ambient operating
temperatures are within the SiBar device’s
operating temperature range.
6. Verify that the SiBar device’s dimensions fit
the application’s space considerations.
7. Independently evaluate and test the suitability
and performance of the SiBar device in the
application.
Electrical Characteristics (25° C, Unless Otherwise Specified)
Part
number
TVB270SC
TVB200SC
TVB170SC
TVB270SA
TVB200SA
TVB170SA
Notes
V
DM
max.
(V)
270
200
170
270
200
170
(1)
V
BO
max.
(V)
370
320
265
370
320
265
(2)
I
H
min.
(mA)
175
175
175
175
175
175
V
T
max.
(V)
5.0
5.0
5.0
5.0
5.0
5.0
(3)
C
1
typ
(pF)
50
50
50
20
20
20
(4)
I
TSM
min.
(A)
60
60
60
22
22
22
(5)
FCC
5x320 µs
100
100
100
90
90
90
(5)
Lightning Current Wave Forms
Telcordia
10x560 µs 10x160 µs 10x1000 µs 2x10 µs
100
200
100
500
100
200
100
500
100
200
100
500
70
70
70
(5)
100
100
100
(5)
50
50
50
(5)
-
-
-
(5)
ITU
5x310 µs
100
100
100
90
90
90
-
Notes:
1. V
DM
measured per UL497B pulse requirements; max. off-state leakage current (I
DM
) = 5 µA.
2. Measured at a typical breakover current (I
BO
) = 230 mA.
3. C, measured at f = 1 MHz, 50-V
DC
bias, 1 V
RMS
4. Peak on-state surge current (60 Hz, one cycle).
5. Refer to application notes (www.circuitprotection.com) for further details.
Electrical Characteristics (25° C, Unless Otherwise Specified)
Parameter
Peak on-state surge current
(60Hz, one cycle)
Critical rate-of-rise of on-state current
(max. 2 x 10-µs waveform, I
SC
=120A)
Critical rate-of-rise of off-state voltage
(linear waveform, V
D
= Rated V
BO
, T
i
= 25° C)
Storage temperature
Operating temperature
Junction temperature
Symbol
I
TSM
di/dt
dv/dt
Unit
A
A/µs
V/µs
°C
°C
°C
TVBxxxSA
22
150
2000
–65 to 150
–40 to 125
175
TVBxxxSC
60
250
2000
–65 to 150
–40 to 125
175
Voltage-Current Characteristics
I
I
PP
The voltage-current (V-I) is useful in depicting
the electrical characteristics of the SiBar thyristor surge
protectors in relation to each other.
I
T
I
H
I
BO
I
DM
V
T
V
DM
V
V
BO
Symbol
V
BO
I
BO
I
H
I
T
V
T
V
DM
I
DM
I
PP
di/dt, dv/dt
Parameter
Breakdown voltage
Breakdown current
Hold current
On-state current
On-state voltage
Maximum off-state
voltage
Off-state current
Peak pulse current
Critical rate of rise of
on-state current and voltage
Definition
Maximum voltage across the device at breakdown
measured under a specified voltage and current rate of rise.
Instantaneous current flowing at the breakover voltage (V
BO
)
Minimum current required to maintain the device in the on-state condition.
Current through the device in the on-state condition.
Voltage across the device in the on-state condition at a specified current (I
T
)
Maximum DC voltage that can be applied to the device while maintaining
it in the off-state condition.
Maximum DC value of current that results from the application of the maximum
off-state voltage.
Rated peak pulse current of specified amplitude and waveshape.
that may be applied without damage.
Maximum current and voltage rate of rise the device can withstand
without damage.
Typical Electrical Characteristics vs. Temperature
Off-state voltage vs. temperature
120%
Percentage of V
DM
at 25° C
Percentage of I
H
at 25° C
115%
110%
105%
100%
95%
90%
85%
–50
–25
0
25
50
75
Temperature (°C)
100
125
150
200%
180%
160%
140%
120%
100%
80%
60%
40%
Hold current vs. temperature
20%
–50
–25
0
25
50
75
Temperature (°C)
100
125
150
Typical Electrical Characteristics vs. Temperature (continued)
Breakover voltage vs. temperature
115%
Percentage of V
BO
at 25° C
110%
I
DM
(mA)
105%
100%
95%
90%
–50
100
Off-state current vs. temperature
10
1
0.1
0.01
0.001
–25
–25
0
25
50
75
Temperature (°C)
100
125
150
0
25
50
75
100
Temperature (°C)
125
150
Product Dimensions
SiBar SA and SC devices are offered in industry-
standard “SMB” device packages for easy
installation.
All devices are bidirectional and may be oriented
in either direction during installation.
S
A
D B
K
P
J
H
C
A
Millimeters
Inches
H
Millimeters
Inches
min.
0.051
0.002
max.
0.152
0.006
min.
0.15
0.006
min.
4.06
0.160
max.
4.57
0.180
J
max.
0.30
0.012
min.
3.30
0.130
B
max.
3.81
0.150
K
min.
0.76
0.030
max.
1.27
0.050
min.
1.90
0.075
C
max.
2.41
0.095
P
ref.
0.51
0.020
min.
1.96
0.077
D*
max.
2.11
0.083
S
min.
5.21
0.205
max.
5.59
0.220
* D dimension is measured within dimension P.
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