Ultra-Precision Power Resistor
(10 Watts)
TCR, Resistance Range, Tolerance, Rated Power
PB
PC
Type
TCR (ppm/°C)
-55°C to +125°C
0±15 (W)
0±15 (W)
0±5 (X)
0±2.5 (Y)
Resistance
Range ( )
0.4 to 1
1 to 5
PB
5 to 10
10 to 25
25 to 50
Rated
Power (W)
at 25°C
Resistance Tolerance (%)*
±1 to ±5 (F, G, J)
±0.5 to ±5 (D, F, G, J)
±0.1 to ±5 (B, D, F, G, J)
±0.05 to ±5 (A, B, D, F, G, J)
±0.02 to ±5 (Q, A, B, D, F, G, J)
2
On
heat sink**
10
0.1 to 5
0±15 (W)
0±5 (X)
0±2.5 (Y)
5 to 10
10 to 25
25 to 100
±0.1 to ±5 (B, D, F, G, J)
±0.05 to ±5 (A, B, D, F, G, J)
±0.02 to ±5 (Q, A, B, D, F, G, J)
±0.01 to ±5 (T, Q, A, B, D, F, G, J)
0±15 (W)
0±15 (W)
0±5 (X)
50 to 50k
±0.01 to ±5 (T, Q, A, B, D, F, G, J)
0.002 to 0.05 ±0.5 to ±5 (D, F, G, J)
0.05 to 0.1
±0.5 to ±5 (D, F, G, J)
Composition of Type Number
PC
PB X 50R000 B
epyT
RCT
eulaV ecnatsiseR
ecnareloT
Resistance value, in ohm, is expressed by a series of six characters, five of
which represent significant digits. The sixth R or K is a dual-purpose letter that
designates both the value range (R for ohmic; K for kilo-ohm) and the location
of decimal point.
Configuration
T
W
T
1
D
T
W
T
1
d
PC
L
1
L
2
F
D
Type
L
L
1
L
2
W
T
T
1
F
D
d
PC
40.0±0.2
20.0±0.2
30.0±0.5
20.0±0.2
5.0±0.2
1.0±0.1
15.0±0.5
30±10
0.4
0.8±0.05
1.2±0.05
Dimensions in mm
PB
Schematic of PC
4-Terminal Connection
24
L
)C¡( 061 041
551
L
1
L
2
F
L
erutarepmeT tneibmA
06
021 001 08
04
52
d
PB
02
001
)%(
08
06
04
02
V
V
V
V
I
I
:elpmaxE
I
I
Symbols in parentheses are for type number composition.
*Resistance figures for type PB are the values obtained by measuring the leads at
point 12.7±3.2mm away from the root, but in case of resistance below 10 ohm, the
values at 5.08±0.6mm away.
**For heat sinking, an aluminum chassis in 152.4 (L) x 101.6 (W) x 50.8 (H) x 1.0mm (T)
shall be used.
Power Derating Curve
egatnecreP rewoP detaR
Performance
Parameters
Maximum Rated Operating Temperature
Working Temperature Range
Maximum Working Voltage
Maximum Working Current
Power Conditioning
Low Temperature Storage
Dielectric Withstanding Voltage
Insulation Resistance
Low Temperature Operation
Overload
Moisture Resistance
Terminal Strength
Shock
Vibration, High Frequency
Life
High Temperature Exposure
Solderability
25°C, Rated Voltage, 96 hrs.
-55°C, No Load, 24 hrs.
Atmospheric: AC 1KV, 1 min. Barometric: AC 500V, 1min.
DC 500V, 2 min.
-55°C, Rated Voltage
Rated Voltage x 2.5, 5 sec.
+65°C to -10°C, 90% RH to 98% RH, Rated Voltage, 10 cycles (240 hrs.)
2.27kg (5 pounds),10 sec.
100G, 6ms., Sawtooth Wave, X, Y, Z, each 3 shocks
20G, 10Hz to 2,000Hz to 10Hz, 20 min., X, Y, Z, each 4 hrs.
25°C, Rated Power, 1.5 hr. – ON, 0.5 hr. – OFF, 2,000 hrs.
155°C, No Load, 2,000 hrs.
245°C, 5 sec.
±0.2%
±0.3%
±0.2%
over 10,000M
±0.3%
±0.3%
±0.5%
±0.2%
±0.2%
±0.2%
±1.0%
±1.0%
over 95% coverage
Test Condition
MIL-R-39009 Specification
ALPHA Typical Test Data
25°C
-55°C to +155°C
750V
PB=5A, PC=32A
±0.02%
±0.005%
±0.005%
over 10,000M
±0.005%
±0.01%
±0.05%
±0.005%
±0.005%
±0.005%
±0.01%
±0.01%
over 95% coverage
Frequency Characteristics
Temperature of Resistor Surface
Four-Terminal Resistor
For low ohmic resistor (less than 10 ohm), the resistance value and TCR of the
copper lead increases overall resistance value. Four-terminal (Kelvin) connection
is recommended per the following figure. Loading current at voltage and current
terminals (V, I) causes measurement error.
Affect of PB type lead for resistance value and TCR
m 1
1
1
00.0
0.0
1
.0
1
k1
m /
)
00 3 :daeL fo R
c 63.0 :daeL fo eulaV ecnatsiseR
(
eulaV ecnatsiseR lani o
00
0
eulaV
ecnatsiseR
1
C¡/mpp
1
9,
R
CT
m
1
N
CT
1
.0
1
1
1
1
0000.0
00.0
0.0
Four-Terminal Resistor
i
i
ecafruS tnemelE :B
nwoD dewercS
ecafruS dloM :A
)ria llits ni(
tnemerusaeM erutarepmeT rof stopS
)T( mm0.1 x )H( mm8.05 x
)W( mm6.101 x )L( mm4.251
)C¡/mpp(
sissahC munimulA
00
0
1
1
sissahC munimulA nO
c
=
L
r
e o detal
P-r
edlo
S 8
.0
/
)W/C¡9.4( B
)W/C¡4.3( A
)W(
pp
C
rewoP deilppA
01 9 8 7 6 5
)W/C¡5.51( A
riA eerF nI
)%(
1
1
.0
000.0
4 3
)W/C¡2.91(
B
2
1
07
)C¡( T
06
05
04
03
02
01
)zHM(
V
I
001
4.
k2
01
0
1
001
2r
4r
05
ycneuqerF
01
5
BP
esiR erutarepmeT
1r
3r
1
)%(
051
001
05
V
I
)CD(R/)CA(R
eulaV ecnatsiseR lanoitidd
A
R
CT
lanoitidd
A
25
Microcontroller MCU
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