DDR DRAM, 32MX32, 6ns, CMOS, PBGA90, 10 X 13 MM, GREEN, PLASTIC, VFBGA-90
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Micron Technology |
Parts packaging code | BGA |
package instruction | VFBGA, BGA90,9X15,32 |
Contacts | 90 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
access mode | FOUR BANK PAGE BURST |
Maximum access time | 6 ns |
Other features | AUTO/SELF REFRESH |
Maximum clock frequency (fCLK) | 133 MHz |
I/O type | COMMON |
interleaved burst length | 2,4,8 |
JESD-30 code | R-PBGA-B90 |
JESD-609 code | e1 |
length | 13 mm |
memory density | 1073741824 bit |
Memory IC Type | DDR DRAM |
memory width | 32 |
Number of functions | 1 |
Number of ports | 1 |
Number of terminals | 90 |
word count | 33554432 words |
character code | 32000000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 32MX32 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | VFBGA |
Encapsulate equivalent code | BGA90,9X15,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) | 260 |
power supply | 1.8 V |
Certification status | Not Qualified |
refresh cycle | 8192 |
Maximum seat height | 1 mm |
self refresh | YES |
Continuous burst length | 2,4,8 |
Maximum standby current | 0.0006 A |
Maximum slew rate | 0.14 mA |
Maximum supply voltage (Vsup) | 1.95 V |
Minimum supply voltage (Vsup) | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Tin/Silver/Copper (Sn/Ag/Cu) |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 30 |
width | 10 mm |