HWB401S8X datasheet, PDF - EEWORLD Datasheet

HWB401S8X: Description2MX16 FLASH 12V PROM CARD, 200ns, XMA68; Categorystorage storage; File Size385KB，19 Pages; ManufacturerSeiko Epson Corporation

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HWB401S8X Overview

2MX16 FLASH 12V PROM CARD, 200ns, XMA68

Parameter Name	Attribute value
Maker	Seiko Epson Corporation
package instruction	,
Reach Compliance Code	unknown
ECCN code	3A991.B.1.A
Maximum access time	200 ns
Other features	2K BYTE EEPROM SERVES AS ATTRIBUTE MEMORY; HARDWARE WRITE PROTECT; 10K ERASE/WRITE CYCLES MIN
JESD-30 code	X-XXMA-X68
memory density	33554432 bit
Memory IC Type	FLASH CARD
memory width	16
Number of functions	1
Number of terminals	68
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	60 °C
Minimum operating temperature
organize	2MX16
Output characteristics	3-STATE
Package body material	UNSPECIFIED
Package shape	UNSPECIFIED
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Programming voltage	12 V
Certification status	Not Qualified
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	UNSPECIFIED
Terminal location	UNSPECIFIED
type	NOR TYPE

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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