SEMICONDUCTOR
9N25 Series
N-Channel Power MOSFET
(8.8A, 250Volts)
RoHS
RoHS
Nell High Power Products
DESCRIPTION
The Nell
9N25
are N-channel enhancement mode
silicon gate power field effect transistors.
They are designed, tested and guaranteed to
minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency
switching DC/DC converters, switching mode power
supplies, DC-AC converters for uninterrupted power
supplies (UPS) and motor controls.
D
G
D
S
TO-220AB
(9N25A)
GD
S
TO-220F
(9N25AF)
FEATURES
R
DS(ON)
= 0.43Ω @ V
GS
= 10V
Ultra low gate charge(35nC max.)
Low reverse transfer capacitance
(C
RSS
= 45pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C
operation temperature
G
(Gate)
D (Drain)
S (Source)
PRODUCT SUMMARY
I
D
(A)
V
DSS
(V)
R
DS(ON)
(Ω)
Q
G
(nC) max.
8.8
250
0.45 @ V
GS
= 10V
35
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
DSS
V
DGR
V
GS
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
STG
T
L
PARAMETER
Drain to Source voltage(Note 1)
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
TEST CONDITIONS
T
J
=25°C to 150°C
R
GS
=20KΩ
V
GS
=10V, T
C
=25°C
V
GS
=10V, T
C
=100°C
VALUE
250
250
±30
8.8
5.6
35.2
8.8
UNIT
V
Pulsed Drain current (Note 1)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy(Note 1)
Single pulse avalanche energy (Note 2)
Peak diode recovery dv/dt(Note 3)
Total power dissipation ( Derating factor above 25
°
C )
Operation junction temperature
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
T
C
=25°C
TO-220AB
TO-220F
I
AR
=8.8A, R
GS
=50Ω, V
GS
=10V
I
AS
=8.8A, L=5.9mH
A
7.4
285
5.5
74 (0.59)
38 (0.3)
-55 to 150
-55 to 150
300
10 (1.1)
mJ
mJ
V /ns
W( W /
°
C
)
ºC
lbf . in (N . m)
Note:
1.
Repetitive rating: pulse width limited by junction temperature.
2
.
V
DD
=50V, L=5.9mH, I
AS
=8.8A, R
G
=25Ω,starting T
J
=25˚C
3
.
I
SD
≤
8.8A, di/dt
≤
3
0
0A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤ 150°C.
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Page 1 of 8
SEMICONDUCTOR
9N25 Series
RoHS
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
R
th(c-s)
R
th(j-a)
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Thermal resistance, junction to ambient
TO-220AB
TO-220F
TO-220AB, TO-220F
TO-220AB, TO-220F
0.5
62.5
Min.
Typ.
Max.
1.69
3.29
ºC/W
UNIT
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
STATIC
V
(BR)DSS
Drain to source breakdown voltage
Breakdown voltage temperature coefficient
Drain to source leakage current
PARAMETER
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA
I
D
= 1mA, referenced to 25°C
V
DS
=250V, V
GS
=0V
V
DS
=200V, V
GS
=0V
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
V
GS
= 10V, l
D
= 4.4A (Note 1)
V
GS
=V
DS
, I
D
=250μA
V
DS
=40V, I
D
=4.4A
T
C
= 25°C
T
C
=125°C
Min.
Typ.
Max.
UNIT
V
250
0.30
10
100
100
-100
0.35
2
7
545
710
150
60
40
180
190
140
0.43
4
▲
V
(BR)DSS
/
▲
T
J
I
DSS
I
GSS
R
DS(ON)
V
GS(TH)
g
fS
DYNAMIC
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
L
D
L
S
Q
G
Q
GS
Q
GD
V/ºC
μA
nA
Ω
V
S
Gate to source forward leakage current
Gate to source reverse leakage current
Static drain to source on-state resistance
Gate threshold voltage
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Internal drain inductance
Internal source inductance
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
V
DS
= 200V, V
GS
= 10V, I
D
= 8.8A
Between lead, 6mm from
package and center of die
V
DD
= 125V, I
D
= 8.8A, R
G
= 25Ω,
V
GS
= 10V, (Note 1)
V
DS
= 25V, V
GS
= 0V, f =1MHz
115
46
15
85
90
65
4.5
7.5
26.5
3.5
13.5
pF
ns
nH
35
nC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25°C unless otherwise specified)
SYMBOL
V
SD
I
s
(I
SD
)
PARAMETER
Diode forward voltage
Continuous source to drain current
TEST CONDITIONS
I
SD
= 8.8A, V
GS
= 0V
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
Min.
Typ.
Max.
1.5
8.8
UNIT
V
I
SM
Pulsed source current
G
(Gate)
S (Source)
35.2
A
t
rr
Q
rr
t
ON
Reverse recovery time
Reverse recovery charge
Forward turn-on time
I
SD
= 8.8A, V
GS
= 0V,
dI
F
/dt = 100A/µs
218
1.6
ns
μC
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note:
1.
Pulse test: Pulse width
≤ 300μs,
duty cycle
≤ 2%
.
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Page 2 of 8
SEMICONDUCTOR
9N25 Series
RoHS
RoHS
Nell High Power Products
ORDERING INFORMATION SCHEME
9
Current rating, I
D
9 = 8.8A
N 25
A
MOSFET series
N
=
N-Channel
Voltage rating, V
DS
25 = 250V
Package type
A
=
TO-220AB
AF
=
TO-220F (ITO-220AB)
Fig.1 On-region characteristics
Fig.2 Transfer characteristics
Drain Current (A), l
D
Drain Current (A),l
D
10
1
V
GS
Top: 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
Bottorm: 4.5V
10
1
150ºC
25ºC
10
0
10
0
-55ºC
Note:
1. 250µs Pulse Test
2. T
C
= 25°C
Note:
1. V
DS
= 40V
2. 250µs Pulse Test
10
-1
10
-1
10
0
10
1
10
-1
2
4
6
8
10
Drain-Source voltage , V
DS
(V)
Gate-to-Source voltage , V
GS
(V)
Fig.3 On-Resistance variation vs. drain
current and gate voltage
Drain-Source On-Resistance, R
DS(ON)
(Ω)
1.25
Fig.4 Body diode forward voltage variation
with Source current and Temperatue
1.00
V
GS
= 10V
Reverse drain current, l
DR
(A)
Note:
T
J
= 25°C
10
1
0.75
0.50
V
GS
= 20V
10
0
150ºC
25ºC
Note:
1. V
GS
= 0V
2. 250µs Pulse Test
0.25
0.00
0
10
20
30
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Drain current, I
D
(A)
Source-Drain voltage, V
SD
(V)
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Page 3 of 8
SEMICONDUCTOR
9N25 Series
Fig.6 Gate charge characteristics
12
RoHS
RoHS
Nell High Power Products
Fig.5 Capacitance characteristics
2000
Gate-Source voltage,V
GS
(V)
C
iss
= C
gs
+C
gd
( C
gs
= shorted )
C
oss
= C
ds
+C
gd
C
rss
= C
gd
10
8
V
DS
= 50V
V
DS
= 125V
V
DS
= 200V
Capacitance, (pF)
1500
C
ISS
1000
C
OSS
C
RSS
6
4
2
500
Notes:
1. V
GS
= 0V
2. f = 1MH
z
Note: l
D
= 8.8A
0
10
0
10
1
0
5
10
15
20
25
30
0
10
-1
Drain-Source voltage, V
DS
(V)
Total gate charge, Q
G
(nC)
Fig.7 Breakdown voltage variation vs.
Temperature
1.2
3.0
Fig.8 On-Resistance variation vs.
.
Temperature
Drain-Source breakdown voltage,
BV
Dss
(Normalized)
Drain-Source On-Resistance,
R
Ds(ON) ,
(Normalized)
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note:
1. V
GS
= 10V
2. l
D
= 4.4A
1.1
1.0
0.9
Note:
1. V
GS
= 0V
2. l
D
= 250μA
0.8
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
Junction temperature, T
j
(°C)
Junction temperature, T
J
(°C)
Fig.9-1 Maximum safe operating area
for 9N25A
10
2
Operation in This Area is Limited by R
DS(on)
Fig.9-2 Maximum safe operating area
for 9N25AF
10
2
Operation in This Area is Limited by R
DS(on)
Drain current, l
D
,
(A)
10
1
Drain current, l
D
,
(A)
100µs
1ms
10ms
DC
10µs
10
1
100µs
1ms
10ms
10
0
Note:
1.T
C
= 25°C
2.T
J
= 150°C
10
0
Note:
1.T
C
= 25°C
2.T
J
= 150°C
3.Sing Pulse
DC
10
-1
3.Sing Pulse
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
Drain-Source voltage, V
DS
(V)
Drain-Source voltage, V
DS
(V)
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Page 4 of 8
SEMICONDUCTOR
9N25 Series
RoHS
RoHS
Nell High Power Products
Fig.10 Maximum drain current vs
Case temperature
10
8
Drain current ,l
D
(A)
6
4
2
0
25
50
75
100
125
150
Case temperature, T
j
(°C)
Fig.11-1 Transient thermal response curve for 9N25A
Thermal response z
θJC
(t)
10
0
D
= 0.5
0.2
0.1
P
DM
t
1
t
2
10
-1
0.05
0.02
0.01
Single pulse
Notes:
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
1.
Z
θJC
(t)
= 1.69
°C/W Max.
2.
Duty = Factor, D = t
1
/t
2
3.
T
JM
-
T
C
=
P
DM
x Z
θJC
(t)
10
-0
10
1
Square wave pulse duration , t
1
(seconds)
Fig.11-2 Transient thermal response curve for 9N25AF
Thermal response z
θJC
(t)
D
= 0.5
10
0
0.2
0.1
P
DM
0.05
Single pulse
t
1
t
2
10
-1
0.02
0.01
Notes:
1.
Z
θJC
(t)
= 1.69
°C/W Max.
2.
Duty = Factor, D = t
1
/t
2
3.
T
JM
-
T
C
=
P
DM
x Z
θJC
(t)
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
-0
10
1
Square wave pulse duration , t
1
(seconds)
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Page 5 of 8
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