IRFBE30-002 datasheet, PDF - EEWORLD Datasheet

IRFBE30-002: DescriptionPower Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size35KB，1 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IRFBE30-002 Overview

Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	260 mJ
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	800 V
Maximum drain current (ID)	4.1 A
Maximum drain-source on-resistance	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	125 W
Maximum pulsed drain current (IDM)	16 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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