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X28HC256KI-90

Description
32KX8 EEPROM 5V, 90ns, CPGA28, CERAMIC, PGA-28
Categorystorage    storage   
File Size492KB,17 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

X28HC256KI-90 Overview

32KX8 EEPROM 5V, 90ns, CPGA28, CERAMIC, PGA-28

X28HC256KI-90 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codePGA
package instructionCERAMIC, PGA-28
Contacts28
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time90 ns
command user interfaceNO
Data pollingYES
Durability1000000 Write/Erase Cycles
JESD-30 codeR-CPGA-P28
JESD-609 codee0
length16.51 mm
memory density262144 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codePGA
Encapsulate equivalent codePGA28,5X6
Package shapeRECTANGULAR
Package formGRID ARRAY
page size128 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height4.62 mm
Maximum standby current0.0005 A
Maximum slew rate0.06 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal pitch2.54 mm
Terminal locationPERPENDICULAR
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
width14 mm
Maximum write cycle time (tWC)5 ms
X28HC256
256k, 32k x 8-Bit
Data Sheet
September 21, 2011
FN8108.3
5V, Byte Alterable EEPROM
The X28HC256 is a second generation high performance
CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s
proprietary, textured poly floating gate technology, providing
a highly reliable 5V only nonvolatile memory.
The X28HC256 supports a 128-byte page write operation,
effectively providing a 24µs/byte write cycle, and enabling
the entire memory to be typically rewritten in less than 0.8
seconds. The X28HC256 also features DATA Polling and
Toggle Bit Polling, two methods of providing early end of
write detection. The X28HC256 also supports the JEDEC
standard Software Data Protection feature for protecting
against inadvertent writes during power-up and power-down.
Endurance for the X28HC256 is specified as a minimum
1,000,000 write cycles per byte and an inherent data
retention of 100 years.
Features
• Access time: 70ns
• Simple byte and page write
- Single 5V supply
- No external high voltages or V
P-P
control circuits
- Self-timed
- No erase before write
- No complex programming algorithms
- No overerase problem
• Low power CMOS
- Active: 60mA
- Standby: 500µA
• Software data protection
- Protects data against system level inadvertent writes
• High speed page write capability
• Highly reliable Direct Write
cell
- Endurance: 1,000,000 cycles
- Data retention: 100 years
• Early end of write detection
- DATA polling
- Toggle bit polling
• Pb-free available (RoHS compliant)
Block Diagram
X BUFFERS
LATCHES AND
DECODER
A
0
TO A
14
ADDRESS
INPUTS
Y BUFFERS
LATCHES AND
DECODER
I/O BUFFERS
AND LATCHES
256kBIT
EEPROM
ARRAY
I/O
0
TO I/O
7
CE
OE
WE
V
CC
V
SS
CONTROL
LOGIC AND
TIMING
DATA INPUTS/OUTPUTS
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Copyright Intersil Americas Inc. 2005-2007, 2010, 2011. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
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