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1N1198E3

Description
Rectifier Diode, 1 Phase, 1 Element, 40A, 600V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PIN
CategoryDiscrete semiconductor    diode   
File Size155KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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1N1198E3 Overview

Rectifier Diode, 1 Phase, 1 Element, 40A, 600V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 PIN

1N1198E3 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionO-MUPM-D1
Reach Compliance Codecompliant
ECCN codeEAR99
applicationPOWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-203AB
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current800 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Maximum output current40 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time5 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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