P2111 datasheet, PDF - EEWORLD Datasheet

P2111: DescriptionStandard SRAM, 256X4, 1000ns, MOS, PDIP18, PLASTIC, DIP-18; Categorystorage storage; File Size275KB，12 Pages; ManufacturerAMD; Websitehttp://www.amd.com

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P2111 Overview

Standard SRAM, 256X4, 1000ns, MOS, PDIP18, PLASTIC, DIP-18

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	AMD
Parts packaging code	DIP
package instruction	DIP, DIP18,.3
Contacts	18
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	1000 ns
I/O type	COMMON
JESD-30 code	R-PDIP-T18
JESD-609 code	e0
length	22.987 mm
memory density	1024 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	18
word count	256 words
character code	256
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256X4
Output characteristics	3-STATE
Exportable	NO
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP18,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	5.08 mm
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	MOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm

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