EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

NAND99R3M2CZBB5E

Description
Memory Circuit, Flash+SDRAM, PBGA107
Categorystorage    storage   
File Size725KB,33 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

NAND99R3M2CZBB5E Overview

Memory Circuit, Flash+SDRAM, PBGA107

NAND99R3M2CZBB5E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
package instructionFBGA, BGA107,10X14,32
Reach Compliance Codecompliant
JESD-30 codeR-PBGA-B107
Memory IC TypeMEMORY CIRCUIT
Mixed memory typesFLASH+SDRAM
Number of terminals107
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA107,10X14,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
power supply1.8 V
Certification statusNot Qualified
Nominal supply voltage (Vsup)1.8 V
surface mountYES
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号