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SM6T150C

Description
600W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size50KB,1 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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SM6T150C Overview

600W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2

SM6T150C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
package instructionR-PDSO-C2
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Maximum breakdown voltage165 V
Minimum breakdown voltage143 V
Breakdown voltage nominal value150 V
Maximum clamping voltage265 V
ConfigurationSINGLE
Minimum diode capacitance200 pF
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation4 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage121 V
Maximum reverse current5 µA
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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