Agilent ABA-54563
3.4 GHz Broadband Silicon
RFIC Amplifier
Data Sheet
Features
• Single +5V Supply
• High linearity
• VSWR < 1.4 throughout operating
frequency
• Miniature SOT363 (SC70) Package
Description
Agilent ’s ABA-54563 is an economi-
cal, easy-to-use internally 50-ohm
matched silicon monolithic amplifier
that offers excellent gain and
broadband response from DC to
3.4 GHz. Packaged in an ultraminia-
ture industry-standard SOT-363
package, it requires half the board
space of a SOT-143 package.
At 2 GHz, the ABA-54563 offers a
small-signal gain of 23.1 dB, output
P1dB of 16.1 dB and 27.8 dBm
output third order intercept point.
It is suitable for use as buffer
amplifiers for wideband applica-
tions. They are designed for low
cost gain blocks in cellular applica-
tions, DBS tuners, LNB and other
wireless communications systems.
At IF frequencies, the ABA-54563
offers good linearity performance
with a typical OIP3 of 35 dBm at
200 MHz.
ABA-54563 is fabricated using
Agilent’s HP25 silicon bipolar
process, which employs a double-
diffused single polysilicon process
with self-aligned submicron emitter
geometry. The process is capable of
simultaneous high f
T
and high NPN
breakdown (25 GHz f
T
at 6V BVCEO).
The process utilizes industry stan-
dard device oxide isolation technolo-
gies and submicron aluminum
multilayer interconnect to achieve
superior performance, high unifor-
mity and proven reliability.
Surface Mount Package
SOT-363/SC70
• Unconditionally stable
Typical Performance at +5V/79.1 mA
2 GHz
• 23.1 dB Gain
• 27.8 dBm OIP3
• 16.1 dBm P
1dB
Pin Connections and
Package Marking
GND 1
Output
& Vcc
• 4.4 dB Noise Figure
200 MHz
• 23 dB Gain
• 35 dBm OIP3
• 18 dBm P
1dB
• 3.6 dB Noise Figure
Vcc
4Cx
GND 2
Input
GND 3
Note:
Top View. Package marking provides orientation
and identification. “x” is character to identify
date code.
Simplified Schematic
Vcc
RF
Output
& Vcc
RF
Input
Ground 2
Ground 3
Ground 1
ABA-54563 Absolute Maximum Ratings
[1]
Symbol
V
cc
P
in
P
diss
θ
j-c
T
j
T
STG
Parameter
Device Voltage, RF output to ground (T = 25°C)
CW RF Input Power
Total Power Dissipation
[3]
Thermal Resistance
[2]
Junction Temperature
Storage Temperature
Units
V
dBm
W
°C/W
°C
°C
Absolute Max.
6
20
560
110
150
-65 to 150
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement method.
3. Case temperature Tc at 25°C. Derate at
9.1mW/°C for Tc > 87.5°C.
Product Consistency Distribution Charts at 5.0V and 2 GHz.
[1]
100
80
120
100
80
60
80
60
40
20
20
20
0
15.3
0
3.6
FREQUENCY
60
FREQUENCY
40
40
0
21.8
FREQUENCY
22.2
22.6
S21
23
23.4
23.8
15.6
15.9
P1dB
16.2
16.5
16.8
4
4.4
NF
4.8
5.2
Figure 1. S21 Distribution.
Figure 2. P1dB Distribution.
Figure 3. Noise Figure Distribution.
80
60
FREQUENCY
C
block
1 nF
RF Output
40
4Cx
RFC
33 nH
Vcc
20
RF Input
0
26.5
27
27.5
OIP3
28
28.5
29
C
block
1 nF
C
bypass
100 pF
C
bypass
1000 pF
Figure 4. OIP3 Distribution.
Figure 5. Test circuit at of the 2 GHz production test board used for NF,
Gain and OIP3 measurements. Circuit losses have been de-embedded
from actual measurements.
Note:
1. Measured on the production test circuit base on 500 samples.
2
Electrical Specifications
T
c
= +25°C, Z
o
= 50
Ω,
P
in
= -30 dBm, V
cc
= 5V, Freq = 2 GHz, unless stated otherwise.
Symbol
Gp
[1]
∆Gp
NF
[1]
P1dB
50Ω[1]
OIP3
[1]
VSWR
in[1]
VSWR
out[1]
Icc
[1][2]
Parameter and Test Condition
Power Gain (|S
21
| )
Power Gain Flatness,
Noise Figure
2
Units
dB
Min.
21
Typ.
23.0
23.1
0.5
3.0
3.6
4.4
18.0
16.1
35.0
27.8
1.20
1.11
1.20
1.14
Max.
25
Std Dev.
0.2
f = 200 MHz
f = 2. 0 GHz
f = 0.1 ~ 2.0 GHz
f = 0.1 ~ 3.4 GHz
f = 200 MHz
f = 2. 0 GHz
f = 200 MHz
f = 2. 0 GHz
f = 200 MHz
f = 2. 0 GHz
dB
dB
dBm
dBm
4.8
0.08
0.18
0.32
0.02
0.02
Output Power at 1dB Gain Compression
Output Third Order Intercept Point
Input VSWR
Output VSWR
Device Current
f = 200 MHz
f = 2.0 GHz
f = 200 MHz
f = 2.0 GHz
mA
75
79.1
90
0.2
Notes:
Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard deviation
and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values anywhere
within the upper and lower spec limits.
3
ABA-54563 Typical Performance
T
c
= +25°C, Z
o
= 50Ω, V
cc
= 5V unless stated otherwise.
26
24
22
GAIN (dB)
GAIN (dB)
20
18
16
14
12
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
5.5V
5.0V
4.5V
26
24
22
20
18
16
14
12
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
85°C
25°C
-40°C
8
7
6
NF (dB)
5
4
3
2
1
0
0
0.5
5.5V
5.0V
4.5V
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Figure 6. Gain vs. Frequency and Voltage.
Figure 7. Gain vs. Frequency and Temperature.
Figure 8. Noise Figure vs. Frequency and
Voltage.
20
8
7
6
P1dB (dBm)
NF (dB)
5
4
3
2
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
85°C
25°C
-40°C
20
15
P1dB (dBm)
5.5V
5.0V
4.5V
15
10
10
5
5
85°C
25°C
-40°C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
0
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Figure 9. Noise Figure vs. Frequency and
Temperature.
Figure 10. Output Power for 1dB Gain
Compression vs. Frequency and Voltage.
Figure 11. Output Power for 1dB Gain
Compression vs. Frequency and Temperature.
4
ABA-53563 Typical Performance,
continued
T
c
= +25°C, Z
o
= 50Ω, V
cc
= 5V unless stated otherwise.
40
35
30
25
IP3
40
35
30
25
IP3
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
5.5V
5.0V
4.5V
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
85°C
25°C
-40°C
Figure 12. Output IP3 vs. Frequency and
Voltage.
1.6
1.5
14
1.3
1.2
1.1
1
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
VSWR IN
VSWR OUT
Figure 13. Output IP3 vs. Frequency and
Temperature.
100
85°C
25°C
-40°C
80
Icc (mA)
VSWR
60
40
20
0
0
1
2
3
Vcc (V)
4
5
6
Figure 14. Input and Output VSWR vs.
Frequency.
Figure 15. Supply Current vs. Voltage and
Temperature.
5
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