EEPROM Module, 128KX8, 200ns, Parallel, CMOS
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | LSC/CSI |
package instruction | DIP, DIP32,.6 |
Reach Compliance Code | unknown |
ECCN code | 3A001.A.2.C |
Maximum access time | 200 ns |
Other features | AUTOMATIC WRITE;PAGE WRITE;BULK ERASE |
Data polling | YES |
Durability | 10000 Write/Erase Cycles |
JESD-30 code | R-XDMA-T32 |
JESD-609 code | e0 |
memory density | 1048576 bit |
Memory IC Type | EEPROM MODULE |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 32 |
word count | 131072 words |
character code | 128000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 128KX8 |
Package body material | UNSPECIFIED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP32,.6 |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
page size | 64 words |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 5 V |
Programming voltage | 5 V |
Certification status | Not Qualified |
Filter level | 38535Q/M;38534H;883B |
Maximum standby current | 0.008 A |
Maximum slew rate | 0.07 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
switch bit | YES |
Maximum write cycle time (tWC) | 10 ms |
write protect | SOFTWARE |