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EDH816H64C35C9M

Description
SRAM Module, 256KX4, 35ns, CMOS,
Categorystorage    storage   
File Size151KB,6 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric View All

EDH816H64C35C9M Overview

SRAM Module, 256KX4, 35ns, CMOS,

EDH816H64C35C9M Parametric

Parameter NameAttribute value
MakerEDI [Electronic devices inc.]
Reach Compliance Codeunknown
Maximum access time35 ns
Other featuresCONFIGURABLE AS 64K X 16
Spare memory width8
JESD-30 codeR-XDMA-T40
memory density1048576 bit
Memory IC TypeSRAM MODULE
memory width4
Number of functions1
Number of ports1
Number of terminals40
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize256KX4
Output characteristics3-STATE
ExportableNO
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal formTHROUGH-HOLE
Terminal locationDUAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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