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HB56D236SB-6A

Description
Fast Page DRAM Module, 2MX36, 60ns, CMOS, SIMM-72
Categorystorage    storage   
File Size371KB,12 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HB56D236SB-6A Overview

Fast Page DRAM Module, 2MX36, 60ns, CMOS, SIMM-72

HB56D236SB-6A Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
Parts packaging codeSIMM
package instructionSIMM, SSIM72
Contacts72
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time60 ns
Other featuresRAS ONLY/CAS BEFORE RAS REFRESH
Spare memory width18
I/O typeCOMMON
JESD-30 codeR-XSMA-N72
memory density75497472 bit
Memory IC TypeFAST PAGE DRAM MODULE
memory width36
Number of functions1
Number of ports1
Number of terminals72
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX36
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeSIMM
Encapsulate equivalent codeSSIM72
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply5 V
Certification statusNot Qualified
refresh cycle1024
Maximum seat height31.75 mm
Maximum standby current0.024 A
Maximum slew rate1.3 mA
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationSINGLE

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