EEPROM, 2KX8, 300ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Atmel (Microchip) |
Parts packaging code | QFJ |
package instruction | QCCN, LCC32,.45X.55 |
Contacts | 32 |
Reach Compliance Code | unknown |
ECCN code | 3A001.A.2.C |
Maximum access time | 300 ns |
Other features | AUTOMATIC WRITE |
command user interface | NO |
Data polling | YES |
Durability | 10000 Write/Erase Cycles |
JESD-30 code | R-CQCC-N32 |
JESD-609 code | e0 |
length | 13.97 mm |
memory density | 16384 bit |
Memory IC Type | EEPROM |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 32 |
word count | 2048 words |
character code | 2000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -55 °C |
organize | 2KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | QCCN |
Encapsulate equivalent code | LCC32,.45X.55 |
Package shape | RECTANGULAR |
Package form | CHIP CARRIER |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 5 V |
Programming voltage | 5 V |
Certification status | Not Qualified |
ready/busy | YES |
Filter level | 38535Q/M;38534H;883B |
Maximum seat height | 2.54 mm |
Maximum standby current | 0.003 A |
Maximum slew rate | 0.045 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | YES |
technology | CMOS |
Temperature level | MILITARY |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | NO LEAD |
Terminal pitch | 1.27 mm |
Terminal location | QUAD |
Maximum time at peak reflow temperature | NOT SPECIFIED |
switch bit | NO |
width | 11.43 mm |
Maximum write cycle time (tWC) | 0.2 ms |