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SMF33A

Description
1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB
Categorysemiconductor    Discrete semiconductor   
File Size748KB,4 Pages
ManufacturerJuxing Electronic
Websitehttp://www.trr-jx.com
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SMF33A Overview

1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB

TVS: SMF5.0 thru SMF170A
Glass Passivated TVS
Features
For surface mounted applications in
order to optimize board space
Low profile space
Glass passivated chip
Low inductance
Excellent clamping capability
Very fast response time
Typical I
D
less than 1µA at V
WM
200 W peak pulse power capability
with a 10/1000 µs waveform
Component in accordance to
RoHS 2002/95/1 and WEEE 2002/96/EC
Mechanical Date
Case: JEDEC SOD-123FL molded plastic
over passivated chip
Terminals: Solder plated, solderable per
MIL-STD-750 Method 2026
Polarity: For uni-directional types the band
by laser denotes the cathode, which is
positive with respect to the anode under
normal TVS operation
Maximum Ratings & Thermal Characteristics & Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
Symbol
Peak pulse power dissipation
with a 10/1000µs waveform (Note1,2)
Peak pulse current 10/1000μS waveform(Note 1)
Forward voltage @IF=200mA
Peak forward surge current 8.3ms single half sine-wave
Operating junction and storage temperature range
Notes:
1.Non-repetitive current pulse and derated above T
A
=25℃
2.Mounted on 5.0mm
2
copper pads to each terminal.
VALUE
200
See Next Table
1.25
20
–55 to +150
UNIT
W
A
V
A
°C
P
PPM
I
PPM
V
F
I
FSM
T
J
T
STG
http://www.trr-jx.com

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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