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M29W641DH70N6

Description
4MX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
Categorystorage    storage   
File Size642KB,42 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

M29W641DH70N6 Overview

4MX16 FLASH 3V PROM, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

M29W641DH70N6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Parts packaging codeTSOP
package instruction12 X 20 MM, PLASTIC, TSOP-48
Contacts48
Reach Compliance Codenot_compliant
ECCN code3A991.B.1.A
Maximum access time70 ns
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G48
JESD-609 codee0
length18.4 mm
memory density67108864 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size128
Number of terminals48
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Department size32K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
typeNOR TYPE
width12 mm
M29W641DH, M29W641DL
M29W641DU
64 Mbit (4Mb x16, Uniform Block)
3V Supply Flash Memory
PRODUCT PREVIEW
FEATURES SUMMARY
s
SUPPLY VOLTAGE
– V
CC
= 2.7V to 3.6V Core Power Supply
– V
CCQ
= 1.8V to 3.6V for Input/Output
– V
PP
=12 V for Fast Program (optional)
s
s
Figure 1. Packages
ACCESS TIME: 70, 90, 100 and 120ns
PROGRAMMING TIME
– 10 µs typical
– Double Word Program option
s
s
128 UNIFORM, 32-KWord MEMORY BLOCKS
PROGRAM/ERASE CONTROLLER
– Embedded Program and Erase algorithms
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
TSOP48 (N)
12 x 20mm
s
s
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
WRITE PROTECT OPTIONS
FBGA
s
– M29W641DH: WP Pin for Write Protection of
Highest Address Block
– M29W641DL: WP Pin for Write Protection of
Lowest Address Block
– M29W641DU: No Write Protection
s
TEMPORARY BLOCK UNPROTECTION
MODE
s
s
TFBGA63 (ZA)
7 x 11mm
COMMON FLASH INTERFACE
EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
additional information
s
LOW POWER CONSUMPTION
– Standby and Automatic Standby
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code M29W641D: 22C7h
s
April 2003
This is preliminary information on a new product now in development. Details are subject to change without notice.
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