datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Discrete semiconductor> The transistor> SIHB16N50CTL-E3
PDF
Preview

SIHB16N50CTL-E3

Description
TRANSISTOR 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size176KB，9 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

SIHB16N50CTL-E3 Overview

TRANSISTOR 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

SIHB16N50CTL-E3 Parametric

Parameter NameAttribute value
MakerVishay
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)320 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)16 A
Maximum drain current (ID)16 A
Maximum drain-source on-resistance0.38 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)250 W
Maximum pulsed drain current (IDM)40 A
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON

SIHB16N50CTL-E3 Preview

SiHP16N50C, SiHB16N50C, SiHF16N50C
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
TO-220AB
TO-220 FULLPAK
FEATURES
560
V
GS
= 10 V
68
17.6
21.8
Single
D
• Low Figure-of-Merit R
on
x Q
g
0.38
• 100 % Avalanche Tested
• Gate Charge Improved
• T
rr
/Q
rr
Improved
• Compliant to RoHS Directive 2002/95/EC
Note
*
Pb containing terminations are not RoHS compliant, exemptions
may apply
G
D
S
G
D
S
D
2
PAK
(TO-263)
G
S
G
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220AB
SiHP16N50C-E3
-
-
D
2
PAK (TO-263)
SiHB16N50C-E3
SiHB16N50CTR-E3
SiHB16N50CTL-E3
TO-220 FULLPAK
SiHF16N50C-E3
-
-
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
c
Linear Derating Factor
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d
for 10 s
TO220-AB, D
2
PAK (TO-263)
TO-220 FULLPAK
E
AS
P
D
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 30
16
10
40
2
320
250
38
- 55 to + 150
300
°C
W/°C
mJ
W
A
UNIT
V
Notes
a. Limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 2.5 mH, R
g
= 25
,
I
AS
= 16 A.
c. Repetitive rating; pulse width limited by maximum junction temperature.
d. 1.6 mm from case.
S11-1116-Rev. B, 13-Jun-11
1
Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHP16N50C, SiHB16N50C, SiHF16N50C
www.vishay.com
Vishay Siliconix
SYMBOL
R
thJA
R
thJC
R
thJA
TO220-AB D
2
PAK (TO-263)
62
0.5
40
TO-220 FULLPAK
65
3.3
-
°C/W
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Junction-to-Ambient (PCB mount)
a
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward
Transconductance
a
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Current
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 8 A
V
DS
= 50 V, I
D
= 3 A
MIN.
500
-
3.0
-
-
-
-
-
-
-
-
-
TYP.
-
0.6
-
-
-
-
0.31
3
1900
230
24
45
18
22
27
156
29
31
1.6
MAX.
-
-
5.0
± 100
50
250
0.38
-
-
-
-
68
-
-
-
-
-
-
-
UNIT
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz
pF
V
GS
= 10 V
I
D
= 16 A, V
DS
= 400 V
-
-
-
nC
V
DD
= 250 V, I
D
= 16 A,
R
g
= 9.1 V
GS
= 10 V
f = 1 MHz, open drain
-
-
-
-
ns
-
-
-
-
-
-
-
-
-
555
5.5
18
16
A
30
1.8
-
-
-
V
ns
μC
A
G
S
T
J
= 25 °C, I
S
= 10 A, V
GS
= 0 V
T
J
= 25 °C, I
F
= I
S
, dI/dt = 100 A/μs,
V
R
= 20 V
Note
• The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to
produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell
such products.
S11-1116-Rev. B, 13-Jun-11
2
Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHP16N50C, SiHB16N50C, SiHF16N50C
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix
50
V
GS
45
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
BOTTOM 5.0 V
TOP
I
D
, Drain-to-Source Current (A)
40
35
30
25
20
15
10
5
0
0
T
J
= 25 °C
I
D
, Drain-to-Source Current (A)
45
40
35
30
25
20
15
10
5
0
0
2
4
6
8
T
J
= 150 °C
T
J
= 25 °C
7.0 V
5
10
15
20
25
30
10
12
14
16
18
20
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics (TO-220)
V
GS
, Gate-to-Source Voltage (V)
Fig.
3
- Typical Transfer Characteristics
R
DS(on)
, Drain-to-Source On-Resistance
(Normalized)
30
V
GS
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
BOTTOM 5.0 V
TOP
3
I
D
= 16 A
2.5
2
1.5
1
0.5
V
GS
= 10 V
0
- 60 - 40 - 20
0
20 40 60 80 100 120 140 160
I
D
, Drain-to-Source Current (A)
T
J
= 150 °C
25
20
15
10
5
0
0
7.0 V
5
10
15
20
25
30
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics (TO-220)
T
J
, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
S11-1116-Rev. B, 13-Jun-11
3
Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHP16N50C, SiHB16N50C, SiHF16N50C
www.vishay.com
Vishay Siliconix
100
2800
2400
2000
C
iss
1600
1200
C
oss
800
400
C
rss
0
1
10
100
1000
I
SD
, Reverse Drain Current (A)
C, Capacitance (pF)
V
GS
= 0 V, f = 1MHz
C
iss
= C
gs
+C
gd
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
T
J
= 150 °C
T
J
= 25 °C
1
V
GS
= 0 V
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
DS
, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
24
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
4
0
0
20
40
I
D
, Drain-to-Source Current (A)
I
D
= 16 A
V
DS
= 400 V
V
DS
= 250 V
V
DS
= 100 V
100
OPERATION IN THIS AREA
LIMITED BY R
DS(on)
10
100 µs
1
TT
C
==25 °C
T
CC
= 25 °C
T
C
= 25 °C
25 °C
150 °C
TT
J
==150 °C
T
J J
= 150 °C
T
J
= 150 °C
Single Pulse
Single Pulse
Single Pulse
Single Pulse
0.1
10
100
1 ms
10 ms
60
80
1000
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area (TO-220AB, D
2
PAK)
100
OPERATION IN THIS AREA
LIMITED BY R
DS(on)
I
D
, Drain-to-Source Current (A)
10
100 µs
1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
0.1
10
100
1 ms
10 ms
1000
V
DS
, Drain-to-Source Voltage (V)
Fig. 9 - Maximum Safe Operating Area (TO-220 FULLPAK)
S11-1116-Rev. B, 13-Jun-11
4
Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiHP16N50C, SiHB16N50C, SiHF16N50C
www.vishay.com
Vishay Siliconix
R
D
V
DS
V
GS
R
G
V
DS
90 %
D.U.T.
+
-
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
1
0.5
Thermal Response (Z
thJC
)
0.2
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
Single Pulse
(Thermal Response)
0.01
10
-4
10
-3
10
-2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
0.1
1
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220AB, D
2
PAK)
1
0.5
Thermal Response (Z
thJC
)
0.2
0.1
0.1
0.05
0.02
t
1
t
2
Single Pulse
(Thermal Response)
10
-4
10
-3
10
-2
0.1
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
1
10
P
DM
0.01
t
1
, Rectangular Pulse Duration (s)
Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220 FULLPAK)
S11-1116-Rev. B, 13-Jun-11
5
Document Number: 91401
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

SIHB16N50CTL-E3 Related Products

SIHB16N50CTL-E3 SIHB16N50CTR-E3
Description TRANSISTOR 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power TRANSISTOR 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
Maker Vishay Vishay
Parts packaging code D2PAK D2PAK
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 4 4
Reach Compliance Code unknown unknown
Avalanche Energy Efficiency Rating (Eas) 320 mJ 320 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V 500 V
Maximum drain current (Abs) (ID) 16 A 16 A
Maximum drain current (ID) 16 A 16 A
Maximum drain-source on-resistance 0.38 Ω 0.38 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSSO-G2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 250 W 250 W
Maximum pulsed drain current (IDM) 40 A 40 A
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON

Recommended Resources

50Wx2 power amplifier circuit

Variable frequency high frequency LC oscillator circuit

60Hz high Q value notch filter circuit

Small current touch switch circuit diagram

Metal detector circuit diagram B

Differential amplifier circuit with adjustable voltage gain and common mode rejection ratio

A programmer was writing code on the subway and was criticized by passers-by: What's so great about that!
Source: Programming Expert People nowadays have stronger and stronger self-awareness. They focus on doing their own things and don’t care much about other people’s opinions. No matter how others evalu...
eric_wang Talking
RT-Thread device framework learning RTC device
RT-Thread learning record 1. New Studio Project 2. Brief description of console usage 3. PIN device framework learning 4.UART device framework learning 5.I2C device framework learning 6. SPI device fr...
ID.LODA Embedded System
Orcad learning notes (three) class and sub class in PCB
If you want to draw PCB in orcad, you need to understand the concept of class and subclass. The subclass is a bit like the layer in AD and PADS, but it is not exactly the same. For example: Package Ge...
bigbat PCB Design
[Hua Diao Experience] 17 Beetle ESP32C3 and WS2812 screen music visualization rhythm light
The MAX9814is a low-cost, high-performance microphone amplifier with automatic gain control (AGC) and low-noise microphone bias. The device features a low-noise front-end amplifier, a variable gain am...
eagler8 DIY/Open Source Hardware
SMS Humor
A man was concentrating on his computer. His mother pushed the door open and handed him a glass of water. He looked at the glass blankly and asked thoughtfully: "Mom, did you copy it or move it?"...
gaoyanmei Talking
EEWORLD University----42/5000 Power over Ethernet (PoE) Training Series
42/5000 Power over Ethernet (PoE) training series : https://training.eeworld.com.cn/course/5347...
hi5 Talking
Shortcut:   L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components

  1. EH2545ETTTS-2.941M TR
  2. 1600FGH500433EB
  3. LS5906-TO-78-8L
  4. P9-231382
  5. MXMLL5268B-1TR
  6. Y4022576R000Q0R
  7. P0402Z1622FNWA
  8. 1210B132Z160VW
  9. P4SMAJ60A-AU_R1_000A1
  10. GDZJ16B-34_AY_10001
  11. A2547HE-5P-WH
  12. D3961H-24P-WH

Popular Articles

  1. 51 MCU-Serial Port & LCD Screen Ⅰ
  2. 4-Multi-range digital voltmeter based on 51 single chip microcomputer
  3. Detailed explanation of S3c2440ARM exception and interrupt system 1---concept introduction and processing flow
  4. ELEXCON2021: See the innovation of national technology products and applications
  5. Melexis Launches QVGA Resolution Intra-Flight Sensor Chip with Integrated Infrared Bandpass Filter
  6. The difference between explosion-proof motors and ordinary motors
  7. Chengdu plans to introduce special policies for the integrated circuit industry
  8. How to use a multimeter? Learn all about it in one article
  9. Dongni Electronics: More than 50 crystal growth furnaces have been installed and debugged
  10. Huawei announces electric vehicle drive system patent: can improve vehicle mileage and driving flexibility

Technical ResourceMore

  1. vhdl golden reference guide
  2. C language implementation
  3. Multi-GHz Frequency Synthesis and
  4. Clock information display system based on single chip microcomputer and GPS
  5. Operational Amplifier Calculation Process
  6. CSI-2_Demo_System
  7. datasheet nand flash s29glxxx
  8. I can\'t remember clearly
  9. Feature-based multi-target tracking and its implementation on Blackfin
  10. ESD System Introduction 71 pages 11.7M

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号