PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH26N60P
IXTQ26N60P
IXTT26N60P
IXTV26N60P
IXTV26N60PS
V
DSS
= 600
V
I
D25
= 26
A
Ω
R
DS(on)
≤
270 mΩ
TO-247 (IXTH)
G
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/μs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 5
Ω
T
C
= 25°C
Maximum Ratings
600
600
±30
±40
26
65
13
40
1.2
10
V
V
V
V
G
D
S
TO-3P (IXTQ)
A
A
A
mJ
J
V/ns
D
S
D (TAB)
TO-268 (IXTT)
G
S
D (TAB)
460
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
°C
°C
PLUS220 (IXTV)
G
D
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P&TO-247)
Mounting force (PLUS220)
TO-3P
TO-247
TO-268
PLUS220 & PLUS220SMD
300
260
S
D (TAB)
PLUS220SMD (IXTV_S)
1.13/10 Nm/lb.in.
11..65/2.5..15
5.5
6.0
5.0
4.0
N/lb
g
g
g
g
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
μA
V
DS
= V
GS
, I
D
= 250
μA
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
600
3.0
5.0
±100
10
250
270
V
V
nA
μA
μA
mΩ
Features
Fast Recovery diode
Unclamped Inductive Switching (UIS)
rated
International standard packages
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
DS99376E(12/06)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
μs,
duty cycle d
≤
2 %
© 2006 IXYS All rights reserved
IXTT26N60P
Symbol
Test Conditions
IXTH26N60P IXTQ26N60P
IXTV26N60P IXTV26N60PS
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
16
26
4150
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.27
°C/W
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
400
27
25
V
GS
= 10 V, V
DS
= 0.5 I
D25
, I
D
= 0.5 I
D25
R
G
= 5
Ω
(External)
27
75
21
72
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
27
24
TO-3P, PLUS220 & TO-247
0.21
°C/W
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Test Conditions
V
GS
= 0 V
Repetitive
I
F
= I
S
, V
GS
= 0 V, pulse test
I
F
= 26A, -di/dt = 100 A/μs
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
26
78
1.5
500
A
A
V
n
Characteristic Curves
Fig. 1. Output Characteristics
@ 25
º
C
60
24
20
V
GS =
10V
7V
54
48
42
V
GS
= 10V
7V
Fig. 2. Extended Output Characteristics
@ 25
º
C
I
D
- Amperes
I
D
- Amperes
16
12
8
4
5V
0
0
1
2
3
4
5
6
7
6V
36
30
24
18
12
6V
5V
6
0
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
V
D S
- Volts
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXTT26N60P
Fig. 3. Output Characte ris tics
@ 125
º
C
3.2
24
20
V
GS
= 10V
7V
2.8
IXTH26N60P IXTQ26N60P
IXTV26N60P IXTV26N60PS
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem pe rature
V
GS
= 10V
R
D S ( o n )
- Normalized
2.4
2
1.6
I
D
= 13A
1.2
0.8
0.4
I
D
- Amperes
16
12
8
4
0
0
2
4
6
8
10
6V
I
D
= 26A
5V
12
14
16
-50
-25
0
25
50
75
100
125
150
V
D S
- Volts
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs . I
D
3.2
V
GS
= 10V
2.8
T
J
= 125
º
C
30
27
24
21
T
J
- Degrees Centigrade
Fig. 6. Drain Current vs. Case
Te m perature
R
D S ( o n )
- Normalized
I
D
- Amperes
T
J
= 25
º
C
2.4
18
15
12
9
6
3
2
1.6
1.2
0.8
0
10
20
30
40
50
60
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
Fig. 7. Input Adm ittance
50
45
40
50
45
40
Fig. 8. Transconductance
T
J
= -40
º
C
25
º
C
125
º
C
g
f s
- Siemens
I
D
- Amperes
35
30
25
20
15
10
5
0
4
4.5
5
5.5
6
6.5
7
7.5
T
J
= 125
º
C
25
º
C
-40
º
C
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
35
40
45
50
V
G S
- Volts
I
D
- Amperes
© 2006 IXYS All rights reserved
IXTT26N60P
Fig. 9. Source Current vs.
Source-To-Drain Voltage
80
70
60
10
9
8
IXTH26N60P IXTQ26N60P
IXTV26N60P IXTV26N60PS
Fig. 10. Gate Charge
V
DS
= 300V
I
D
= 13A
I
G
= 10mA
I
S
- Amperes
7
V
G S
- Volts
T
J
= 25
º
C
0.7
0.8
0.9
1
1.1
50
40
30
20
10
0
0.4
0.5
0.6
T
J
= 125
º
C
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
80
V
S D
- Volts
Fig. 11. Capacitance
10000
f = 1MHz
Q
G
- nanoCoulombs
Capacitance - picoFarads
C iss
1000
C oss
100
C rss
10
0
5
10
15
20
25
30
35
40
V
D S
- Volts
Fig. 12. M axim um Trans ie nt The rm al Re s is tance
1.00
R
( t h ) J C
-
º
C / W
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTT26N60P
TO-247 (IXTH) Outline
TO-3P (IXTQ) Outline
IXTH26N60P IXTQ26N60P
IXTV26N60P IXTV26N60PS
TO-268 (IXTT) Outline
1
2
3
Terminals: 1 - Gate
2 - Drain
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A
1
2.2
2.54
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
PLUS220 (IXTV) Outline
PLUS220SMD (IXFV_S) Outline
© 2006 IXYS All rights reserved
Analog electronics
京公网安备 11010802033920号
EEWORLD
