Rectifier Diode, 30A, 200V V(RRM),
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Philips Semiconductors (NXP Semiconductors N.V.) |
Reach Compliance Code | unknown |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.1 V |
JESD-609 code | e0 |
Maximum non-repetitive peak forward current | 160 A |
Maximum operating temperature | 150 °C |
Maximum output current | 30 A |
Maximum repetitive peak reverse voltage | 200 V |
Maximum reverse recovery time | 0.028 µs |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
BYV72-200 | BYV72-50 | BYV72-100 | BYV72-150 | |
---|---|---|---|---|
Description | Rectifier Diode, 30A, 200V V(RRM), | Rectifier Diode, 30A, 50V V(RRM), | Rectifier Diode, 30A, 100V V(RRM), | Rectifier Diode, 30A, 150V V(RRM), |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
Reach Compliance Code | unknown | unknown | unknown | unknown |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
JESD-609 code | e0 | e0 | e0 | e0 |
Maximum non-repetitive peak forward current | 160 A | 160 A | 160 A | 160 A |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
Maximum output current | 30 A | 30 A | 30 A | 30 A |
Maximum repetitive peak reverse voltage | 200 V | 50 V | 100 V | 150 V |
Maximum reverse recovery time | 0.028 µs | 0.028 µs | 0.028 µs | 0.028 µs |
surface mount | NO | NO | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Maker | Philips Semiconductors (NXP Semiconductors N.V.) | - | Philips Semiconductors (NXP Semiconductors N.V.) | Philips Semiconductors (NXP Semiconductors N.V.) |