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IDT71257S25CB

Description
Standard SRAM, 256KX1, 25ns, CMOS, CDIP24, 0.300 INCH, SIDE BRAZED, DIP-24
Categorystorage    storage   
File Size200KB,9 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

IDT71257S25CB Overview

Standard SRAM, 256KX1, 25ns, CMOS, CDIP24, 0.300 INCH, SIDE BRAZED, DIP-24

IDT71257S25CB Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeDIP
package instruction0.300 INCH, SIDE BRAZED, DIP-24
Contacts24
Reach Compliance Codenot_compliant
ECCN code3A001.A.2.C
Maximum access time25 ns
I/O typeSEPARATE
JESD-30 codeR-CDIP-T24
JESD-609 codee0
length30.607 mm
memory density262144 bit
Memory IC TypeSTANDARD SRAM
memory width1
Number of functions1
Number of ports1
Number of terminals24
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize256KX1
Output characteristics3-STATE
ExportableNO
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP24,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum seat height5.08 mm
Maximum standby current0.035 A
Minimum standby current4.5 V
Maximum slew rate0.17 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.62 mm

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