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MT46H256M32L4MC-54AT:A

Description
DDR DRAM, 256MX32, 5ns, CMOS, PBGA240, 14 X 14 MM, GREEN, PLASTIC, WFBGA-240
Categorystorage    storage   
File Size3MB,106 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
Download Datasheet Parametric View All

MT46H256M32L4MC-54AT:A Overview

DDR DRAM, 256MX32, 5ns, CMOS, PBGA240, 14 X 14 MM, GREEN, PLASTIC, WFBGA-240

MT46H256M32L4MC-54AT:A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeBGA
package instructionVFBGA,
Contacts240
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time5 ns
Other featuresAUTO/SELF REFRESH
JESD-30 codeS-PBGA-B240
JESD-609 codee1
length14 mm
memory density8589934592 bit
Memory IC TypeDDR DRAM
memory width32
Number of functions1
Number of ports1
Number of terminals240
word count268435456 words
character code256000000
Operating modeSYNCHRONOUS
Maximum operating temperature105 °C
Minimum operating temperature-40 °C
organize256MX32
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Package shapeSQUARE
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height0.8 mm
self refreshYES
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.5 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width14 mm
2Gb: x16, x32 Mobile LPDDR SDRAM
Features
Mobile Low-Power DDR SDRAM
MT46H128M16LF – 32 Meg x 16 x 4 Banks
MT46H64M32LF – 16 Meg x 32 x 4 Banks
MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2
MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4
MT46H256M32R4 – 32 Meg x 16 x 4 Banks x 4
Features
• V
DD
/V
DDQ
= 1.70–1.95V
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• 4 internal banks for concurrent operation
• Data masks (DM) for masking write data; one mask
per byte
• Programmable burst lengths (BL): 2, 4, 8, or 16
• Concurrent auto precharge option is supported
• Auto refresh and self refresh modes
• 1.8V LVCMOS-compatible inputs
• Temperature-compensated self refresh (TCSR)
• Partial-array self refresh (PASR)
• Deep power-down (DPD)
• Status read register (SRR)
• Selectable output drive strength (DS)
• Clock stop capability
• 64ms refresh; 32ms for the automotive temperature
range
Table 1: Key Timing Parameters (CL = 3)
Speed Grade
-5
-54
-6
-75
Clock Rate
200 MHz
185 MHz
166 MHz
133 MHz
Access Time
5.0ns
5.0ns
5.0ns
6.0ns
Options
• V
DD
/V
DDQ
– 1.8V/1.8V
• Configuration
– 128 Meg x 16 (32 Meg x 16 x 4
banks)
– 64 Meg x 32 (16 Meg x 32 x 4
banks)
• Addressing
– JEDEC-standard
– Reduced page-size
1
– 4-die stack reduced page-size
2
– 2-die stack standard
– 4-die stack standard
• Plastic "green" package
– 60-ball VFBGA (10mm x 11.5mm)
3
– 90-ball VFBGA (10mm x 13mm)
4
• PoP (plastic "green" package)
– 168-ball VFBGA (12mm x 12mm)
4
– 168-ball WFBGA (12mm x 12mm)
4
– 168-ball WFBGA (12mm x 12mm)
4
– 240-ball WFBGA (14mm x 14mm)
4
• Timing – cycle time
– 5ns @ CL = 3 (200 MHz)
– 5.4ns @ CL = 3 (185 MHz)
– 6ns @ CL = 3 (166 MHz)
– 7.5ns @ CL = 3 (133 MHz)
• Power
– Standard I
DD2
/I
DD6
• Operating temperature range
– Commercial (0˚ to +70˚C)
– Industrial (–40˚C to +85˚C)
– Automotive (–40˚C to +105˚C)
1
• Design revision
Notes:
1.
2.
3.
4.
Marking
H
128M16
64M32
LF
LG
R4
L2
L4
CK
CM
JV
KQ
MA
MC
-5
-54
-6
-75
None
None
IT
AT
:A
Contact factory for availability.
Available in the 168-ball JV package only.
Available only for x16 configuration.
Available only for x32 configuration.
PDF: 09005aef83a73286
2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2009 Micron Technology, Inc. All rights reserved.

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