H5PS1G83JFR-E3C datasheet, PDF

H5PS1G83JFR-E3C: DescriptionDDR DRAM, 128MX8, 0.6ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60; Categorystorage storage; File Size1MB，62 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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H5PS1G83JFR-E3C Overview

DDR DRAM, 128MX8, 0.6ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SK Hynix
Parts packaging code	BGA
package instruction	TFBGA, BGA60,9X11,32
Contacts	60
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	MULTI BANK PAGE BURST
Maximum access time	0.6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B60
length	9.5 mm
memory density	1073741824 bit
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	60
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	128MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA60,9X11,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.5 mm

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